Spectroscopy of a GaAs Double Dot Qubit with Dispersive Readout*

We report microwave spectroscopy of a GaAs double dot qubit device using the dispersive gate sensor (DGS) readout technique. In contrast to charge sensing methods based on quantum point contacts (QPCs) or single electron transistors (SETs), the DGS detection method senses the tunneling of charge between states that are near degenerate in energy. Microwave excitation applied to the surface gates enables this readout approach to resolve low energy spectroscopic features not apparent in transport or standard charge sensing measurements. We discuss the origin of these features and the use of this technique for characterizing semiconductor qubit systems.