APS March Meeting 2013
Volume 58, Number 1
Monday–Friday, March 18–22, 2013;
Baltimore, Maryland
Session C4: Invited Session: Industrial Physics Forum: Frontiers in Nanomanufacturing
2:30 PM–5:30 PM,
Monday, March 18, 2013
Room: Ballroom IV
Sponsoring
Unit:
FIAP
Chair: Robert Celotta, National Institute of Standards and Technology
Abstract ID: BAPS.2013.MAR.C4.2
Abstract: C4.00002 : New Computing Devices and the Drive toward Nanometer-scale Manufacturing
3:06 PM–3:42 PM
Preview Abstract
Abstract
Author:
Thomas Theis
(IBM Research (on assignment to Semiconductor Research Corp.))
In recent decades, we have become used to the idea of exponentially
compounding improvements in manufacturing precision. These improvements are
driven in large part by the economic imperative to continuously shrink the
devices of information technology, particularly the Complementary Metal
Oxide Semiconductor (CMOS) field-effect transistor. However, CMOS technology
is clearly approaching some important physical limits. Since roughly 2003,
the inability to reduce supply voltages according to constant-field scaling
rules, combined with economic constraints on areal power density and total
power, has forced designers to limit clock frequencies even as devices have
continued to shrink. New channel materials, new device structures, and novel
circuits cannot fundamentally alter this new status quo. The device physics
must change in a more fundamental way if we are to realize fast digital
logic with very low power dissipation. The continued vitality of the
information technology revolution and the continued push of manufacturing
precision toward nanometer dimensions, will depend on it. Fortunately, there
is no shortage of new digital switch concepts based on physical principles
which avoid the fundamental voltage-scaling limit of the field-effect
transistor. The Nanoelectronics Research Initiative (NRI) is a consortium of
leading semiconductor companies established in 2005 to guide and fund
fundamental research at U.S. universities with the goal of finding the
``next switch'' to replace the CMOS transistor for storing and manipulating
digital information. The National Institute of Standards and Technology
(NIST) and the National Science Foundation (NSF) have partnered with NRI to
fund this research. To date, NRI has funded the exploration of many novel
device concepts, and has guided research comparing the capabilities of these
devices. Although no single device has yet emerged as a clear winner with
the potential to eclipse the field-effect transistor, results are
sufficiently promising that member companies have recently renewed their
commitment to NRI. Based on the learning to date, a vision for the next five
years of research has emerged.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2013.MAR.C4.2