Electronic and Transport Properties of Few-Layer MoS$_{2}$ Crystals

We investigate the electronic properties of few-layer MoS$_{2}$ flakes prepared by mechanical exfoliation. Field-effect transistors from MoS$_{2}$ flakes were fabricated and their properties were systematically characterized as a function of sample thickness. Scanning probe measurements are employed to characterize the interface between MoS$_{2}$ flakes and metal contacts. Transport properties of these devices and their correlation to electronic structure calculations are discussed.