Tuesday, February 28, 2012
2:30PM - 2:42PM
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L28.00001: Auger recombination in gallium arsenide from first principles
Daniel Steiauf, Emmanouil Kioupakis, Chris G. Van de Walle
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Tuesday, February 28, 2012
2:42PM - 2:54PM
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L28.00002: Surface Energies and Cracking in GaN
Cyrus E. Dreyer, Christian Carbogno, Anderson Janotti, Chris G. Van de Walle
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Tuesday, February 28, 2012
2:54PM - 3:06PM
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L28.00003: Crystalline Fe films grown on non-polar GaN: theory and experiment
Steven Erwin, Cunxu Gao, Claudia Roder, Jonas Laehnemann, Oliver Brandt
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Tuesday, February 28, 2012
3:06PM - 3:18PM
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L28.00004: Crystalline non-polar GaN films grown on vicinal Si: theoretical predictions
Alex Kutana, Steven Erwin
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Tuesday, February 28, 2012
3:18PM - 3:30PM
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L28.00005: Hybrid functional studies of stability and diffusion of hydrogen in Mg-doped GaN
Ji-Sang Park, K.J. Chang
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Tuesday, February 28, 2012
3:30PM - 3:42PM
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L28.00006: Electroluminescent Schottky Diodes Fabricated Using Plasma Ion Implantation
Sarah Purdy, Marcel Risch, Phillip Desautels, Michael Bradley
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Tuesday, February 28, 2012
3:42PM - 3:54PM
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L28.00007: Sub-250nm room-temperature optical gain from AlGaN/AlN multiple quantum dot structures
Emanuele Francesco Pecora, Wei Zhang, Lin Zhou, David J. Smith, Jian Yin, Roberto Paiella, Luca Dal Negro, Theodore D. Moustakas
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Tuesday, February 28, 2012
3:54PM - 4:06PM
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L28.00008: Room temperature low threshold stimulated emission of electron beam-pumped AlGaN-based deep UV laser structures emitting below 250 nm
A. Nikiforov, W. Zhang, J. Woodward, J. Yin, E. Pecora, L. Zhou, L. Dal Negro, R. Paiella, D. Smith, T. Moustakas, A. Moldawer
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Tuesday, February 28, 2012
4:06PM - 4:18PM
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L28.00009: Electronic transport through InGaN heterojunctions
Mathieu C\'esar, Donping Liu, Hong Guo
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Tuesday, February 28, 2012
4:18PM - 4:30PM
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L28.00010: Effects of Internal Fields on the Optical Emission in Nanostructured III-N LEDs
Krishna Yalavarthi, Sasi Sundaresan, Ky Merrill, Shaikh Ahmed
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Tuesday, February 28, 2012
4:30PM - 4:42PM
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L28.00011: Accurate first-principles calculation of the rare earth crystal field
Fei Zhou, Vidvuds Ozolins
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Tuesday, February 28, 2012
4:42PM - 4:54PM
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L28.00012: The role of extended defects in Nitride Semiconductors on the performance of optoelectronic devices
T. Moustakas
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Tuesday, February 28, 2012
4:54PM - 5:06PM
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L28.00013: Surface scattering from ceramic phosphors
Alan Lenef, John Kelso, Christopher Peters
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Tuesday, February 28, 2012
5:06PM - 5:18PM
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L28.00014: Light emission from electrically stressed ZnO nanorods
Luca Lucera, Lhacene Adnane, Kadir Cil, Venkata Manthina, Alexander Agrios, Helena Silva, Ali Gokirmak
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Tuesday, February 28, 2012
5:18PM - 5:30PM
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L28.00015: A First-Principles Analysis of the Crystal Structure, Band Gap Energy, Polarization, and Piezoelectric Properties of ZnO-BeO Solid Solutions
Liang Dong, S. Pamir Alpay
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