Avalanches in sub-micron V$_{2}$O$_{3}$ devices*

Systematic resistance versus temperature measurements were performed on micron and sub-micron V$_{2}$O$_{3}$ devices. Instead of smooth R-T curves reported previously, multiple jumps in resistance are observed through the temperature driven metal-insulator transition. These jumps range over 3 orders of magnitude in resistance. A power law distribution of the jump sizes indicates that the metal-insulator transition in V$_{2}$O$_{3}$ occurs through a series of avalanches. The power law exponent in V$_{2}$O$_{3}$ devices is very close to that found in similar VO$_{2}$ devices.\footnote{A. Sharoni, J. G. Ramirez, and I. K. Schuller, Phys. Rev. Lett. \textbf{101}, 026404 (2008).} This indicates that the phase transition in VO$_{2}$ and V$_{2}$O$_{3}$ are similar and occur through phase separation, percolation and avalanches. The effect of magnetic field on the avalanches in V$_{2}$O$_{3}$ will be discussed.