Bulletin of the American Physical Society

APS March Meeting 2012

Volume 57, Number 1

Monday–Friday, February 27–March 2 2012; Boston, Massachusetts

Session Index

Session H28: Focus Session: Dopants and Defects in Semiconductors - Si	Show Abstracts
Sponsoring Units: DMP Chair: Michael Aziz, Harvard University Room: 258C

Tuesday, February 28, 2012 8:00AM - 8:36AM		H28.00001: Reliability of III-V electronic devices -- the defects that cause the trouble Invited Speaker: Sokrates T. Pantelides Preview Abstract
Tuesday, February 28, 2012 8:36AM - 8:48AM		H28.00002: Near-Interface Defects in SiO$_{2}$/SiC MOS Devices A.F. Basile, P.M. Mooney Preview Abstract
Tuesday, February 28, 2012 8:48AM - 9:00AM		H28.00003: Doping in Si/SiO$_{2}$ Structures: A first-principles metadynamics study Nicholas Lanzillo, Philip Shemella, Saroj Nayak, Wanda Andreoni, Alessandro Curioni Preview Abstract
Tuesday, February 28, 2012 9:00AM - 9:12AM		H28.00004: The lifetime recovery puzzle in intermediate band materials: A new experimental approach Mark Winkler, Daniel Recht, Jacob Krich, Michael Aziz, Tonio Buonassisi Preview Abstract
Tuesday, February 28, 2012 9:12AM - 9:24AM		H28.00005: Single-Electron Capacitance Spectroscopy of Individual Dopants in Silicon Matthew DeNinno, Morewell Gasseller, James Harrison, Stuart Tessmer, Sven Rogge, Roger Loo, Matty Caymax Preview Abstract
Tuesday, February 28, 2012 9:24AM - 9:36AM		H28.00006: Charge States of Individual Group V Donors on n-doped Si(111)-(2x1) Surface Veronika Brazdova, Philipp Studer, Cyrus F. Hirjibehedin, Steven Schofield, Neil J. Curson, David R. Bowler Preview Abstract
Tuesday, February 28, 2012 9:36AM - 9:48AM		H28.00007: First-principles calculations for Er impurities in Si Lars Bjaalie, Lars Ismer, Anderson Janotti, Chris G. Van de Walle Preview Abstract
Tuesday, February 28, 2012 9:48AM - 10:00AM		H28.00008: Deactivation of deep level impurities in hyperdoped silicon Christie Simmons, Mark Winkler, Joseph Sullivan, Daniel Recht, Michael Aziz, Tonio Buonassisi Preview Abstract
Tuesday, February 28, 2012 10:00AM - 10:12AM		H28.00009: Single crystal silicon hyperdoped with transition metals Daniel Recht, Matthew Smith, Joseph Sullivan, Supakit Charnvanichborikarn, Mark Winkler, James Williams, Tonio Buonassisi, Silvija Gradecak, Michael Aziz Preview Abstract
Tuesday, February 28, 2012 10:12AM - 10:24AM		H28.00010: Theoretical and Experimental Framework of an Insulator-to-Metal Transition in Selenium-Hyperdoped Silicon Elif Ertekin, Mark Winkler, Daniel Recht, Aurore Said, Michael Aziz, Tonio Buonassisi, Jeffrey Grossman Preview Abstract
Tuesday, February 28, 2012 10:24AM - 10:36AM		H28.00011: Optical Absorption Mechanisms in Sulfur Hyper-doped Silicon Joseph Sullivan, Daniel Recht, Christie Simmons, Michael Aziz, Tonio Buonassisi Preview Abstract
Tuesday, February 28, 2012 10:36AM - 10:48AM		H28.00012: Atomistic study of heavy doping in Si nanowires Mahesh Neupane, Rajib Rahman, Roger Lake Preview Abstract
Tuesday, February 28, 2012 10:48AM - 11:00AM		H28.00013: Femtosecond-laser hyperdoping: controlling sulfur concentrations in silicon for band gap engineering Meng-Ju Sher, Mark Winkler, Yu-Ting Lin, Benjamin Franta, Eric Mazur Preview Abstract

About APS

The American Physical Society (APS) is a non-profit membership organization working to advance the knowledge of physics.

Headquarters 1 Physics Ellipse, College Park, MD 20740-3844 (301) 209-3200
Editorial Office 100 Motor Pkwy, Suite 110, Hauppauge, NY 11788 (631) 591-4000
Office of Public Affairs 529 14th St NW, Suite 1050, Washington, D.C. 20045-2001 (202) 662-8700

Bulletin of the American Physical Society

APS March Meeting 2012

Volume 57, Number 1

Monday–Friday, February 27–March 2 2012; Boston, Massachusetts

Session Index

Session H28: Focus Session: Dopants and Defects in Semiconductors - Si

Follow Us

Engage

My APS

Information for

About APS