Scanning Tunneling Microscope (STM) Study of B-doped Monolayer Graphene

Chemical doping is a promising technique to tailor the electronic properties of graphene. Here we focus on an atomic scale characterization of Boron-doped monolayer graphene sheets using primarily STM, assisted by Raman Spectroscopy and X-ray Absorption Spectroscopy (XAS). We will show in topography that there are two major structures that result from B-doping, and in spectroscopy that each of these structures plays different roles in modifying the electronic properties of graphene. Raman Spectroscopy and XAS provide complementary information about the nature of the B-C bonds in the sample.