APS March Meeting 2011
Volume 56, Number 1
Monday–Friday, March 21–25, 2011;
Dallas, Texas
Session Y2: Topological Insulators: Transport and Interactions
8:00 AM–11:00 AM,
Friday, March 25, 2011
Room: Ballroom A2
Sponsoring
Unit:
DCMP
Chair: Xiaoliang Qi, SLAC National Accelerator Laboratory
Abstract ID: BAPS.2011.MAR.Y2.2
Abstract: Y2.00002 : Dirac Fermions in HgTe Quantum Wells
8:36 AM–9:12 AM
Preview Abstract
Abstract
Author:
Laurens W. Molenkamp
(Physics Institute (EP3), Wuerzburg University )
Replace this text with your abstract. Narrow gap HgTe quantum
wells exhibit
a band structure with linear dispersion at low energies and thus
are very
suitable to study the physics of the Dirac Hamiltonian in a solid
state
system. In comparison with graphene, they boast higher mobilities
and,
moreover, by changing the well width one can tune the effective
Dirac
massfrom positive, through zero, to negative.
Negative Dirac mass HgTe quantum wells are 2-dimensional topological
insulators and, as a result, exhibit the quantum spin Hall
effect. In this
novel quantum state of matter, a pair of spin polarized helical edge
channels develops when the bulk of the material is insulating,
leading to a
quantized conductance. I will present transport data provide very
direct
evidence for the existence of this third quantum Hall effect:
when the bulk
of the material is insulating, we observe a quantized electrical
conductance.
Apart from the conductance quantization, there are some further
aspects of
the quantum spin Hall state that warrant experimental
investigation. Using
non-local transport measurements, we can show that the charge
transport
occurs through edge channels - similar to the situation in the
quantum Hall
effect. However, due to the helical character of the quantum spin
Hall edge
channels, inhomogeneities in the potential profile of the
experimental
devices have a much stronger effect on the transport properties.
Moreover, the quantum spin Hall edge channels are spin polarized.
We can
prove this fact in split gate devices that are partially in the
insulting
and partly in the metallic regime, making use of the occurrence
of the
metallic spin Hall effect to convert the magnetic spin signal
into an
electrical one.
Finally, I will address another aspect of Dirac Fermion physics:
HgTe
quantum wells at a critical thickness of 6.3 nm are zero gap
systems and
exhibit transport physics that is very similar to that observed
over the
past few years in graphene. However, zero gap HgTe wells have a
higher
mobility than graphene, and also have only a single Dirac valley.
This makes
them especially suitable to study quantum interference effects
under a Dirac
Hamiltonian.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.Y2.2