APS March Meeting 2011
Volume 56, Number 1
Monday–Friday, March 21–25, 2011;
Dallas, Texas
Session Y16: Focus Session: Spins in Carbon-Based Materials -- Magnetoresistance, Magneto-Electric Effect
8:00 AM–11:00 AM,
Friday, March 25, 2011
Room: D173
Sponsoring
Units:
GMAG DMP
Chair: Bin Hu, University of Tennessee
Abstract ID: BAPS.2011.MAR.Y16.1
Abstract: Y16.00001 : Quantum Linear Magnetoresistance and Extraordinary Magnetoresistance in Graphene
8:00 AM–8:36 AM
Preview Abstract
Abstract
Author:
Adam Friedman
(US Naval Research Laboratory)
Graphene, a single atomic layer of hexagonally arranged carbon atoms,
presents the optimal platform to study rarely-observed magnetoresistance
(MR) effects because of its temperature-independent mobility and linear band
structure with zero band gap. Linear magnetoresistance (LMR), which is
characterized as a large, non-saturating linear MR, is one such unusual
effect. Normally, the resistance of a conductor in an applied magnetic field
increases quadratically with field and then saturates at a relatively low
value. Models that explain LMR behavior have been proposed that include both
quantum and classical origins, but most systems studied thus far can be
explained by a purely classical model. However, we find that quantum LMR is
observed in multilayer epitaxial graphene grown on SiC at temperatures as
high as 300 K and with a magnitude greater than 200{\%} at 12 Tesla (T). In
addition, a phenomenon closely related to classical LMR called extraordinary
magnetoresistance (EMR) and characterized by even larger MR, can be realized
in metal-shunted graphene devices. Here, due to the different
magnetic-field-dependent resistances of the metallic shunt, graphene, and
shunt-graphene interface, current flows easily through the shunt in zero and
low magnetic field, while in high magnetic field, more current flows around
the shunt and is redistributed in the graphene. Devices made from chemical
vapor deposition (CVD) graphene grown on copper and transferred to a
SiO$_{2}$/Si substrate with Ti/Au shunts display gate-tunable longitudinal
MR of $\sim $600{\%} at 12 T and also show promise for use as Hall sensors.
Graphene magnetoresistance devices have many possible applications including
magnetic field sensors and magnetic read-heads. In contrast with the many
proposed electronic uses for graphene, which necessitate the creation of a
band-gap, graphene magnetoresistance devices that exploit LMR or EMR provide
a use for as-grown or deposited graphene.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.Y16.1