Fractional quantum Hall effect in graphene on boron nitride

Graphene is a remarkable 2D material exhibiting many unique and surprising many-body effects resulting from strong electron interactions. A continuing challenge remains the fabrication of ultra-high mobility devices that allow the intrinsic character of graphene to be fully explored. In my talk I will discuss our recent advancements in fabricating very-high quality graphene devices on boron nitride. Magnetoresistance measurements under very large applied fields will be presented including our recent observation of the fractional quantum Hall effect in multi-terminal devices over a broad range of carrier densities.