APS March Meeting 2011
Volume 56, Number 1
Monday–Friday, March 21–25, 2011;
Dallas, Texas
Session T2: Defects and Strain in Graphene
2:30 PM–5:30 PM,
Wednesday, March 23, 2011
Room: Ballroom A2
Sponsoring
Unit:
DCMP
Chair: Brian LeRoy, University of Arizona
Abstract ID: BAPS.2011.MAR.T2.4
Abstract: T2.00004 : High Resolution Tunneling Spectroscopy of Graphene in Strong and Weak Disorder Potentials
4:18 PM–4:54 PM
Preview Abstract
Abstract
Author:
Joseph Stroscio
(Center for Nanoscale Science and Technology, NIST, Gaithersburg, MD 20899)
Using scanning tunneling spectroscopy (STS), the local density of
states can
be mapped in real space to give insight into the role the local
disorder
potential plays in determining the 2-dimensional electron gas (2DEG)
properties. In this talk I describe studies using scanning tunneling
spectroscopy to examine various graphene systems with varying
degrees of
disorder. The amount of disorder depends on how the graphene was
made. In
the growth of graphene on the Si-face termination of SiC in UHV,
local
defects are found which contribute to strong inter- and intra-valley
scattering [1]. Medium disorder is found in exfoliated graphene
on SiO$_{2}$. Using a back-gated exfoliated graphene device on
SiO$_{2}$ we observe a
Landau level spectrum and charging resonances [2] that are
completely
different from previous STS measurements on weak disorder
graphene systems.
Applying a gating potential allows us to obtain ``STS gate maps''
which show
the graphene 2DEG breaking up into a network of interacting
quantum dots
formed at the potential hills and valleys of the
SiO$_{2}$-induced disorder
potential. Graphene grown on the C-face termination of SiC is
shown to have
weak disorder with Landau level line widths approaching thermal
limits at
liquid He temperatures [3]. Using a new STM system operating at
10 mK, we
are able to resolve a graphene ``quartet'' of the N=1 Landau
level [4]. The
quartet structure shows the complete lifting of the valley and spin
degeneracies, which we determine as a function of magnetic field.
\\[4pt]
[1] \textit{Scattering and Interference in Epitaxial Graphene},
G.~M.~Rutter, J.~N.~Crain, T.~Li, P.~N.~First, and J.~A.~Stroscio,
\textit{Science} \textbf{317, }5835, 219 (2007).
\\[0pt]
[2] \textit{Evolution of Microscopic Localization in Graphene in
a Magnetic Field: From Scattering Resonances to Quantum Dots}, S.
Jung, G. M. Rutter, N. N. Klimov, D. B. Newell, I. Calizo, A. R.
Hight-Walker, N. B. Zhitenev, and J. A. Stroscio, (Nature Physics
in press
DOI:10.1038).
\\[0pt]
[3] \textit{Observing the Quantization of Zero Mass Carriers in
Graphene}, D. L. Miller, K. D. Kubista, G. M. Rutter, M. Ruan,W.
A. de Heer, P.
N. First, and J. A. Stroscio, Science \textbf{324}, 924 (2009).
\\[0pt]
[4] \textit{High Resolution Tunneling Spectroscopy of a Graphene
Quartet}, Y. Jae Song, A. F. Otte, Y. Kuk, Y. Hu, D. B. Torrance,
P. N. First,
W. A. de Heer, H. Min, S. Adam, M. D. Stiles, A. H. MacDonald,
and J. A.
Stroscio, Nature \textbf{467}, 185 (2010).
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.T2.4