APS March Meeting 2011
Volume 56, Number 1
Monday–Friday, March 21–25, 2011;
Dallas, Texas
Session L32: Focus Session: Nano-Optics, Semiconductor and Metal Nanostructures
2:30 PM–5:30 PM,
Tuesday, March 22, 2011
Room: C144
Sponsoring
Unit:
DMP
Chair: Henry O. Everitt, Department of the Army, Redstone Arsenal
Abstract ID: BAPS.2011.MAR.L32.7
Abstract: L32.00007 : Infrared and Terahertz Nanoscopy
3:42 PM–4:18 PM
Preview Abstract
Abstract
Author:
Rainer Hillenbrand
(CIC nanoGUNE Consolider)
During the last years, near-field microscopy based on elastic light
scattering from atomic force microscope tips (scattering-type
scanning
near-field optical microscopy, s-SNOM [1]) has become a powerful
tool for
nanoimaging of local dielectric material properties [2-5] and
optical near
fields of photonic nanostructures [6-8]. After an introduction of
s-SNOM, I
will discuss recently developed applications in materials
sciences and
nanophotonics. I will focus particularly on IR and THz imaging at
wavelengths $\lambda $ around 10 and 118 $\mu $m, where we
typically achieve
a wavelength-independent resolution better than 40 nm,
corresponding to
$\lambda $/250 and $\lambda $/3000, respectively [3]. Using
metal-coated
tips, the strong field enhancement at the tip apex probes the local
dielectric properties of a sample, allowing for the simultaneous
recognition
of materials and free-carrier concentration in semiconductor
nanodevices [3]
and nanowires [5]. Quantitative free-carrier mapping is enabled by
near-field plasmon-polariton spectroscopy, which can be also
applied to
study strain-induced changes of carrier concentration and
mobility [4].
Nanoscale imaging of strain and nanocracks in ceramics can be
achieved by
near-field infrared phonon-polariton spectroscopy [4]. I will
also discuss
the capability of s-SNOM to image the vectorial near-field
distribution of
photonic nanostructures. In this application, a dielectric tip
scatters the
near fields at the sample surface. I will discuss how the
amplitude and
phase-resolved measurement of different near-field components
allows for
mapping of the polarization state in nanoscale antenna gaps [8], of
near-field modes in loaded infrared gap antennas [7] and of
mid-infrared
energy transport in nanoscale transmission lines.
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[1] F. Keilmann, R. Hillenbrand, Phil. Trans. R. Soc. Lond. A
362, 787 (2004).
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[2] R. Hillenbrand et al., Nature 418, 159 (2002).
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[3] A. Huber et al., Nano Lett. 8, 3766 (2008).
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[4] A. Huber et al., Nature Nanotech. 4, 153 (2009).
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[5] J.M. Stiegler et al., Nano Lett. 10, 1387 (2010).
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[6] T. Taubner et al. Science 313, 1595 (2006).
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[7] M. Schnell et al., Nature Photon., 3, 287 (2009).
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[8] M. Schnell et al., Nano Lett., 10, 3524 (2010).
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.L32.7