Electroelastic Hyperfine Tuning of Phosphorus Donors in Silicon*

We demonstrate an electroelastic control of the hyperfine interaction between nuclear and electronic spins opening an alternative way to address and couple spin-based qubits. The hyperfine interaction is measured by electrically detected magnetic resonance in phosphorus-doped silicon epitaxial layers employing a hybrid structure consisting of a silicon-germanium virtual substrate, a piezoelectric actuator, and a loop-terminated coplanar strip line for on-chip microwave magnetic-field generation. By applying a voltage to the actuator, the hyperfine interaction is changed by up to 0.9~MHz, which would be enough to address spin-qubits in isotopically purified $^{28}$Si with a sufficient fidelity under optimized conditions.