Growth and Morphology of High Mobility Organic Semiconductors*

We utilize atomic force microscopy (AFM) to image the growth and morphology of chemically modified, solution-deposited anthradithiophene transistors. We discuss the effects of backbone modifications on crystal structure, film properties, and electrical device performance. These devices display a mobility of 0.001 cm$^2$/Vs to 1 cm$^2$/Vs. Crystal orientation and film structures, such as film thickness, grain size, and growth modes will be discussed. In addition, AFM images are related to diffraction data and conduction channel crystallographic information is extracted.