Van der Waals epitaxial growth and transport properties of Bi2Se3 thin films*

Thin films of Bi$_{2}$Se$_{3}$ with high carrier mobility are grown with van der Waals epitaxy method in ultra-high vacuum environment on single crystal Sapphire (0001) and single crystal SrTiO$_{3}$ (111) surfaces. \textit{Ex-situ} transport measurement revealed weak-antilocalization-like behavior at small out-of-plane magnetic field (B$_{o})$ and non-linear Hall conductance versus Bo. The carrier concentration of the Bi$_{2}$Se$_{3}$ can be substantially tuned with applied electric field through the SrTiO$_{3}$ substrate.