Ferroelectric gating of CVD graphene devices*

The recent availability of large area graphene has opened up new possibility in graphene research. We will first discuss experiments, where graphene on the ferroelectric substrate~PZT allows the fabrication graphene field effect transistors (GFETs) and graphene memory within $\pm $1 V operating voltage with maximum doping exceeding 10$^{13}$ cm$^{-2}$. Ferroelectric substrates may also be of importance for large scale applications. Graphene's exceptional optical and mechanical properties make it suitable also for transparent conductors (TCs). While chemical doping has been proven to be an efficient approach to achieving ultra-low sheet resistance, some challenges remain. Here we propose an alternative way to obtain low sheet resistance of graphene using ferroelectric gating.