APS March Meeting 2011 
Volume 56, Number 1
Monday–Friday, March 21–25, 2011;
Dallas, Texas
Session H2: New Materials for Spin Quantum Hall Effect and Topological Insulators
8:00 AM–11:00 AM, 
Tuesday, March 22, 2011
Room: Ballroom A2
Sponsoring
Unit: 
DCMP
Chair: Shoucheng Zhang, Stanford University
Abstract ID: BAPS.2011.MAR.H2.2
Abstract: H2.00002 : Tunable multifunctional topological insulators in ternary Heusler and related compounds
8:36 AM–9:12 AM
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 Abstract
  Abstract   
Author:
Claudia Felser
(University of Mainz)
Recently the quantum spin Hall effect was theoretically predicted
and 
experimentally realized in quantum wells based on the binary
semiconductor 
HgTe. The quantum spin Hall state and topological insulators are
new states 
of quantum matter interesting for both fundamental
condensed-matter physics 
and material science. Many Heusler compounds with C1b structure
are ternary 
semiconductors that are structurally and electronically related
to the 
binary semiconductors. The diversity of Heusler materials opens wide 
possibilities for tuning the bandgap and setting the desired band
inversion 
by choosing compounds with appropriate hybridization strength (by
the 
lattice parameter) and magnitude of spin--orbit coupling (by the
atomic 
charge). Based on first-principle calculations we demonstrate
that around 50 
Heusler compounds show band inversion similar to that of HgTe. The 
topological state in these zero-gap semiconductors can be created by 
applying strain or by designing an appropriate quantumwell
structure, 
similar to the case of HgTe. Many of these ternary zero-gap
semiconductors 
(LnAuPb, LnPdBi, LnPtSb and LnPtBi) contain the rare-earth
element Ln, which 
can realize additional properties ranging from superconductivity
(for 
example LaPtBi) to magnetism (for example GdPtBi) and heavy fermion 
behaviour (for example YbPtBi). These properties can open new
research 
directions in realizing the quantized anomalous Hall effect and
topological 
superconductors. Heusler compounds are similar to a stuffed diamond, 
correspondingly, it should be possible to find the ``high Z''
equivalent of 
graphene in a graphite-like structure with 18 valence electrons
and with 
inverted bands. Indeed the ternary compounds, such as LiAuSe and
KHgSb with 
a honeycomb structure of their Au-Se and Hg-Sb layers feature
band inversion 
very similar to HgTe which is a strong precondition for existence
of the 
topological surface states. These materials have a gap at the
Fermi energy 
and are therefore candidates for 3D-topological insulators.
Additionally 
they are centro-symmetric, therefore, it is possible to determine
the parity 
of their wave functions, and hence, their topological character. 
Surprisingly, the compound KHgSb with the strong SOC is
topologically 
trivial, whereas LiAuSe is found to be a topological non-trivial
insulator.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2011.MAR.H2.2