Direct self-catalytic lateral grown NiSi nanowire bridge and their electrical transport*

In order to fabricate NiSi nano-interconnector between electrdoes, we introduced self-catalytic direct-lateral growth method. For the growth of NiSi nanowires, Ni/p- or n-type Si bilayer was formed on the thermal oxide coated Si substrate. Then, the layered films were treated in chemical vapour deposition reactor under the flowing of Ar at 900-1500 K. The lateral grown NiSi nanowire bridge showed a high current carrying capacity of 3-10 mA per um at 10 mV of bias voltage. The method introduced in this work suggests that it may be possible to provide building block in nano-electro-spinics.