Tuesday, March 22, 2005
8:00AM - 8:36AM
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H15.00001: Quasi-localized states, electron scattering and carrier mobility in GaNAs
Invited Speaker:
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Tuesday, March 22, 2005
8:36AM - 8:48AM
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H15.00002: Influence of Nitrogen Incorporation Mechanisms on Optical and Electronic Properties of GaAsN Alloys
M. Reason, H.A. McKay, W. Ye, D. Mao, R.S. Goldman, X. Bai, C. Kurdak, V. Rotberg
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Tuesday, March 22, 2005
8:48AM - 9:00AM
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H15.00003: Two-Dimensional Electron Transport in Selectively Doped GaAsN/AlGaAs Heterostructures
X. Bai, H.A. McKay, R.S. Goldman, C. Kurdak
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Tuesday, March 22, 2005
9:00AM - 9:12AM
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H15.00004: Localization and exciton line-width broadening in the dilute nitride, GaNAs
Dermot McPeake, Ivana Bosa, Andrew Lindsay, Stephen Fahy, Eoin P. O'Reilly
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Tuesday, March 22, 2005
9:12AM - 9:48AM
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H15.00005: The unusual band structure properties of dilute nitride GaAsN alloys
Invited Speaker:
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Tuesday, March 22, 2005
9:48AM - 10:00AM
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H15.00006: Excited states of acceptor-like excitons bound to isolated nitrogen in GaAs
D.J. Wolford, E.A. Stinaff, K.W Ver Steeg, Tyson D. Hoffmann
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Tuesday, March 22, 2005
10:00AM - 10:12AM
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H15.00007: Planar modulation of the conduction band edge in GaNxAs1-x
Kirstin Alberi, O.D. Dubon, A. Minor, W. Shan, K.M. Yu, W. Walukiewicz, S.J. Chung, D.E. Mars, F. Zavaliche
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Tuesday, March 22, 2005
10:12AM - 10:24AM
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H15.00008: Electron Transport in Dilute Alloys of GaAs(1-x)N(x)
Richard Ahrenkiel, Joseph Luther, Steven Johnston, Wyatt Metzger
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Tuesday, March 22, 2005
10:24AM - 10:36AM
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H15.00009: Dilute GaAs-Nitride Alloys Grown with Bismuth by MBE
D. A. Beaton, T. Tiedje, S. Tixier, S. E. Webster, N. R. Zangenberg, E. C. Young, P. Wei, F. Schiettekatte, S. Francoeur
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Tuesday, March 22, 2005
10:36AM - 10:48AM
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H15.00010: Role of Nitrogen on Emission Wavelengths of InAs Quantum Dots: InAs/GaAs Interfaces and Strain-compensating GaAsN Burying Layers
I. Suemune, S. Ganapathy, K. Uesugi, N. Matsumura, Y. Nabetani, T. Matsumoto
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