2005 APS March Meeting
Monday–Friday, March 21–25, 2005;
Los Angeles, CA
Session S4: Surface Structure of Compound Semiconductors
2:30 PM–5:30 PM,
Wednesday, March 23, 2005
LACC
Room: 515A
Sponsoring
Unit:
FIAP
Abstract ID: BAPS.2005.MAR.S4.3
Abstract: S4.00003 : Atomic Structure of InGaAs Alloys
3:42 PM–4:18 PM
Preview Abstract
Abstract
Author:
Joanna Mirecki-Millunchick
The surface structure of a seemingly random alloy layer has a great impact
on the compositional homogeneity and subsequent interface formation. For
example, it has been suggested that random fluctuations in composition may
initiate lateral composition that propagates through the remainder of the
film. Our group studies the morphology and surface reconstruction of
InxGa1-xAs alloy layers during growth and after annealing. Films of
different compositions were grown by Molecular Beam Epitaxy on GaAs and InP
to thicknesses less than the critical thickness for 3D islanding or misfit
dislocation formation, and examined using in-situ Scanning Tunneling
Microscopy and ex-situ Atomic Force Microscopy. The surface reconstruction
of these layers is generally more disordered than those of their binary
counterparts, and consists of different reconstruction domains. In
particular, both surfaces show domains of a mixed-terminated (4x3)
reconstruction, which is better ordered for the high In composition. In
addition, there are pockets of a2(2x4) in the case of In0.27Ga0.73As/GaAs,
and b2(2x4) in the case of In0.81Ga0.19As/InP. The coverage of both (2x4)
reconstructions decreases during annealing, concomitant with a decrease in
In surface concentration due to In desorption, suggesting that the (2x4)
reconstructions are enriched in In compared to the (4x3)/(nx3). The coverage
of different reconstructions also changes with film thickness, following
changing surface composition and increasing strain energy. In the case of
the In0.27Ga0.73As films, the In composition at the surface increases with
film thickness and reaches a saturation level, in agreement with previous
reports. The coverage of the (4x3) reconstruction reaches a saturation level
at the same time, suggesting that a high and stable In concentration at the
surface and/or a high strain energy favor a better ordered (4x3). The
coverage of the a2(2x4) reconstruction increases initially with film
thickness, then it decreases as the strain energy continues to increase,
despite the fact that the surface reaches a stable composition. These
results point out the importance of considering the effects of strain energy
and inhomogeneous composition in the understanding of alloys surface
structure.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2005.MAR.S4.3