NMR/NQR and disorder effects in URu$_2$Si$_2$*

NMR experiments at ambient pressure in URu$_2$Si$_2$ demonstrate a linewidth enhancement effect at the hidden order transition temperature ($T_0$). We find that larger amounts of sample disorder appear to induce larger linewidth enhancement at $T_0$. We will present recent NMR and NQR experiments in oriented powder and single crystal samples of URu$_2$Si$_2$ and discuss the measurements with emphasis on a possible connection between linewidth/disorder effects and hidden order. Both NQR and NMR spectra as functions of temperature and NMR for different magnetic field strengths and orientations will be reported.