Characterization of Capacitively Coupled Fluorocarbon Plasma using Two-dimensional Fluid Simulation Including Heat Transfer Equation*

Low temperature fluorocarbon plasma is widely used in various industries, including RIE(Reactive Ion Etching) processes. In order to optimize the process conditions, it is important to analyze the characteristics of the fluorocarbon plasma regarding the behavior of electron, ion and radical species. However, the conventional method lacked information on the gas temperature distribution of neutral species, so it was insufficient to explain the correlation. So, a fluid model of 2D axis-symmetry based on capacitively coupled plasma (CCP) source using fluorogcarbon gas mixture has been developed. In order to investigate the characteristics of the plasma in more detail, heat transfer and Navier-stokes equations are used to explain the effect of the neutral gas temperature. The changes in neutral gas temperature according to the pressure and mixture gas ratio are investigated according to the process gases(CF₄ and C₄F₈). And the results of plasma parameters are compared with those obtained from experiment results.