Bulletin of the American Physical Society
77th Annual Gaseous Electronics Conference
Monday–Friday, September 30–October 4 2024; San Diego, California
Session DT3: Plasma Deposition and Nanotechnology
1:30 PM–3:15 PM,
Tuesday, October 1, 2024
Room: Shutters East I and II
Chair: Jon Gudmundsson, University of Iceland
Abstract: DT3.00001 : Development of Y2O3 Film Deposition Method using Low-temperature Microwave Excited Atmospheric Pressure Plasma Jet (MW-APPJ)*
1:30 PM–1:45 PM
Presenter:
Bat-Orgil Erdenezaya
(Division of Electrical Engineering and Computer Science, Kanazawa University, Ishikawa, Japan)
Authors:
Bat-Orgil Erdenezaya
(Division of Electrical Engineering and Computer Science, Kanazawa University, Ishikawa, Japan)
Hirochika Uratani
(Division of Electrical Engineering and Computer Science, Kanazawa University, Ishikawa, Japan)
Ruka Yazawa
(Nanomaterials Research Institute, Kanazawa University, Ishikawa, Japan)
Md. Shahiduzzaman
(Nanomaterials Research Institute, Kanazawa University, Ishikawa, Japan)
Tetsuya Taima
(Nanomaterials Research Institute, Kanazawa University, Ishikawa, Japan)
Yasunori Tanaka
(Division of Electrical Engineering and Computer Science, Kanazawa University, Ishikawa, Japan)
Tatsuo Ishijima
(Division of Electrical Engineering and Computer Science, Kanazawa University, Ishikawa, Japan)
Collaboration:
Special thanks to the staffs of the Kanazawa university Special Technical Support Center for their continuous support in the development of APPJ.
In this study, we employed MW-APPJ to deposit Y2O3 films on quartz glass substrates using yttrium acetate as a precursor. The deposition was performed at a substrate temperature of 100oC. The dependence of gas flow rate has been investigated. The deposited films exhibited uniformity and adherence to substrates. Grazing incidence x-ray diffraction (GI-XRD) proved the crystalline structure of Y2O3 films, revealing a predominant single cubic (332) phase at around 40.1o. Contrary to the previous studies, the MOCVD or PE-MOCVD Y2O3 films were mostly amorphous when the deposition temperature was below 400oC. Scanning electron microscopy (SEM) images showed granular and dense film surfaces with the presence of crystallinity. XPS confirmed also the Y 3d doublets at 160.6 and 158.8 eV with a shift around 1.7 eV. Notably, the observed deviations from the typical binding energies of Y 3d5/2 and 3d3/2 in pure Y2O3 (156.7 and 158.7 eV, respectively) to higher energies in the deposited films indicate complex interactions involving yttrium.
A presence of crystallinity of Y2O3 was observed at higher carrier gas flow rates, as indicated by GI-XRD. These findings suggest that the method is effective for the quality production of Y2O3 films at relatively low costs. The MW-APPJ, in combination with a MOCVD system, suggests an overall potential to replace a conventional plasma spray technique to obtain Y2O3 film cost-effectively.
*This work was supported by JST SPRING, Grant Number JPMJSP2135.
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