Bulletin of the American Physical Society
76th Annual Gaseous Electronics Conference
Volume 68, Number 9
Monday–Friday, October 9–13, 2023; Michigan League, Ann Arbor, Michigan
Session IW5: Poster Session II; Exhibition & Coffee (4:00pm-6:00pm)
4:00 PM,
Wednesday, October 11, 2023
Room: Michigan League, Ballroom
Abstract: IW5.00044 : Spectroscopic measurements of plasma parameter in a low-pressure magnetized capacitively coupled nitrogen plasma*
Presenter:
Jonggu Han
(Department of Applied Plasma and Quantum beam Engineering, Jeonbuk national university)
Authors:
Jonggu Han
(Department of Applied Plasma and Quantum beam Engineering, Jeonbuk national university)
Jihoon Kim
(Department of Applied Plasma and Quantum beam Engineering, Jeonbuk national university)
Woojin Park
(Department of Applied Plasma and Quantum beam Engineering, Jeonbuk national university)
Sangjun Park
(Department of Applied Plasma and Quantum beam Engineering, Jeonbuk national university)
Se Youn Moon
(Department of Applied Plasma and Quantum beam Engineering, Jeonbuk national university)
The asymmetry effect can be effectively controlled in low pressure by adjusting the magnetic field strength. The magnetic field confines electrons near the electrode and generates the dc self-bias to balance the ion-electron flux. M. Oberberg et al. have reported the magnetized asymmetry effect (MAE) such as changes in the heating mechanism, and ionization rate, in an argon MCCP [1,2]. In order to adopt the MCCP in the semiconductor industry, however, it is imperative to investigate the MAE of various gas plasmas.
In this study, we investigate the magnetic asymmetry effect on the properties of magnetized nitrogen plasma using optical emission spectroscopy. The neodymium magnets are arranged on the grounded electrode and show 60 G of magnetic field strength on the surface of the electrode. The relative ionization rate and dissociation rate are analyzed by comparing the intensity of N2 second positive system, N2+ first negative system, and N I. In addition, plasma temperatures are determined by simulating the molecular spectra and fitting them to the observed emission bands of the molecule.
*This work was supported by Samsung Electronics Co., Ltd (IO220711-01407-01)
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