Bulletin of the American Physical Society
76th Annual Gaseous Electronics Conference
Volume 68, Number 9
Monday–Friday, October 9–13, 2023; Michigan League, Ann Arbor, Michigan
Session IT4: Poster Session I; Exhibition & Coffee (4:00pm-6:00pm)
4:00 PM,
Tuesday, October 10, 2023
Room: Michigan League, Ballroom
Abstract: IT4.00060 : Plasma process modulation from polymerization to etching in C4F8/Ar plasma by nitrogen gas addition*
Presenter:
Woojin Park
(1Department of Applied Plasma and Quantum Beam Engineering, Jeonbuk National University, 567, Baekje-daero, Deokjin-gu, Jeonju-si, Jeollabuk-do, 54896, Republic of Korea 2Depa)
Authors:
Woojin Park
(1Department of Applied Plasma and Quantum Beam Engineering, Jeonbuk National University, 567, Baekje-daero, Deokjin-gu, Jeonju-si, Jeollabuk-do, 54896, Republic of Korea 2Depa)
Se Youn Moon
(1Department of Applied Plasma and Quantum Beam Engineering, Jeonbuk National University, 567, Baekje-daero, Deokjin-gu, Jeonju-si, Jeollabuk-do, 54896, Republic of Korea 2Depa)
Jonggu Han
(1Department of Applied Plasma and Quantum Beam Engineering, Jeonbuk National University, 567, Baekje-daero, Deokjin-gu, Jeonju-si, Jeollabuk-do, 54896, Republic of Korea 2Depa)
Solee Park
(1Department of Applied Plasma and Quantum Beam Engineering, Jeonbuk National University, 567, Baekje-daero, Deokjin-gu, Jeonju-si, Jeollabuk-do, 54896, Republic of Korea 2Depa)
[1] D. M. Chen, L. S. Engelmann, R. L. Bruce, E. A. J. Gottlieb, S. Oehrlein, Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma, J. Vac. Sci. Technol. A, 34 (2016) 01B101, doi: 10.1116/1.4935462.
[2] I. Chun, A. Efremov, G. Y. Yeom, K. Kwon, A comparative study of CF4/O2/Ar and C4F8/O2/Ar plasmas for dry etching applications, Thin solid films, 579 (2015) 136-143. https://doi.org/10.1016/j.tsf.2015.02.060.
[3] Y. S. Mor, T. C. Chang, P. T. Liu, T. M. Tsai, C. W. Chen, S. T. Yan, C. J. Chu, W. F. Wu, F. M. Pan, W. Lur, S. M. Sze. Effective repair to ultra-low-k dielectric material (k2.0) by hexamethyldisilazane treatment, J. Vac. Sci. Technol. B, 20 (2002) 1334-1338, doi: 10.1116/1.1488645.
[4] C. Tsai, D. L. McFadden, Gas-phase atom—radical kinetics of N and O atom reactions with CF and CF2 radicals, Chem. Phys. Lett, 173 (1990) 241-245, https://doi.org/10.1016/0009-2614(90)80086-S.
*This work was supported by a National Research Facilities and Equipment Center grant funded by the Ministry of Education (2021R1A6C101B383), by the R&D program of “Plasma Equipment Intelligence Convergence Research Center (No. 1711121944)” through the National Research Council of Science & Technology grant provided by the Korean government and also partly supported by SEMES.
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