Bulletin of the American Physical Society
76th Annual Gaseous Electronics Conference
Volume 68, Number 9
Monday–Friday, October 9–13, 2023; Michigan League, Ann Arbor, Michigan
Session FT1: Plasma Etching I
8:00 AM–9:30 AM,
Tuesday, October 10, 2023
Room: Michigan League, Koessler
Chair: Shahid Rauf, Applied Materials, Inc.
Abstract: FT1.00005 : OES-based Monitoring Method of Non-maxwellian EEDF and Radical Density for Etch Process Control in Ar/SF6/O2 VHF-CCP*
9:15 AM–9:30 AM
Presenter:
Ji-Won Kwon
(Seoul Nat'l Univ.)
Authors:
Ji-Won Kwon
(Seoul Nat'l Univ.)
Jihoon Park
(Seoul Nat'l Univ.)
Ingyu Lee
(Seoul Nat'l Univ.)
Gon-Ho Kim
(Seoul Nat'l Univ.)
This study proposes a method to obtain non-max. EEDF and radical density using OES data in Ar/SF6/O2 VHF-CCP. Non-max. EEDF can be monitored using OES data and 1s state included collisional-radiative model (CRM). The actinometric coefficient, which is proportionality constant between the line intensity ratio and the density ratio, is determined using the obtained EEDF and excitation cross-section data. The proposed PI-OES (Non-max. EEDF and Radical Density) monitoring method can be effectively utilized as a real-time process monitoring technique for mass volume production (MVP) processes, ensuring reliability and accuracy.
*This work was supported by the National Research Council of Science & Technology (NST) grant by the Korea Government (MSIT) (No.CRC-20-01-NFRI). This research is supported by the Brain Korea 21 FOUR Program (No.4199990314119). This work is supported by the Mobile Display Manufacturing Technology Center, Samsung Display Co., Ltd.
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