Bulletin of the American Physical Society
75th Annual Gaseous Electronics Conference
Volume 67, Number 9
Monday–Friday, October 3–7, 2022;
Sendai International Center, Sendai, Japan
The session times in this program are intended for Japan Standard Time zone in Tokyo, Japan (GMT+9)
Session DM2: Workshop I: Industrial Plasma Technologies |
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Chair: Hajime Sakakita, National Institute of Adv Industrial Science and Technology; Taisei Motomura, National Institute of Advanced Industrial Science and Technology Room: Sendai International Center Tachibana |
Monday, October 3, 2022 10:30AM - 11:15AM |
DM2.00001: Modeling and Simulation of Plasmas for Etch Applications Invited Speaker: Jason Kenney Modeling and simulation of plasma sources is an integral component in the development of industrial plasma processing hardware and in the characterization and optimization of its operation. Here we consider the use of simulation in the context of commercial etch applications, focusing on inductively-coupled (ICP) and capacitively-coupled (CCP) plasma sources. This will cover the types of simulations frequently used along with discussion of benefits and limitations, followed by design considerations for the hardware and their implications. Process complexity will also be explored in the context of a looped, multi-step etch process with variation in pulsed (power-modulated) plasma schemes. Key metrics to be explored include charged and neutral species uniformities, ion energy and angular distributions, and ion-to-neutral flux ratios as well as their impact on etched features. |
Monday, October 3, 2022 11:15AM - 12:00PM |
DM2.00002: Thermal cyclic atomic-level etching in 3D ULSI device fabrication Invited Speaker: Hiroto Ohtake Memory and logic device developments are going to three-dimensional structure for higher integration. They are 3D NAND, 3D DRAM, Gate-all-around transistor and back-side power delivery. For generating 3D structure, lateral etching technology is definitely needed. Recently many researchers and engineers have focused on atomic-layer-etching, ALE. But most evaluations were done by dry etchers, which is for anisotropic etchings. We need other technologies with completely uniform lateral etchings. |
Monday, October 3, 2022 12:00PM - 1:30PM |
DM2.00003: Lunch
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Monday, October 3, 2022 1:30PM - 2:15PM |
DM2.00004: New challenges on semiconductor plasma manufacturing processes Invited Speaker: Tsuyoshi Moriya Machine learning (ML) technique was applied to the plasma-enhanced atomic layer deposition (PEALD) process condition and the plasma distribution control. The latter being related to the uniformity of film thickness and etch rate within a wafer, which are important properties in semiconductor manufacturing. The ML approach adopted herein is governed by an algorithm of building regression models with tuning parameters as explanatory variables, and the uniformity of film thickness and etch rate as response variables. |
Monday, October 3, 2022 2:15PM - 3:00PM |
DM2.00005: Applications of plasma-enhanced deposition technologies in the semiconductor industry Invited Speaker: Jaeho Kim The high-performance semiconductor devices have been demanded in various fields, such as mobile, on-device AI, GFX, cloud AI and data center. We have been developing core technologies on advanced semiconductor manufacturing equipment for the next generation semiconductor devices of DRAM, NAND and Logic. In this talk, the technology trend for the next generation semiconductor devices is reviewed. And then, in special, technology issues related to plasma-enhanced deposition methods in the semiconductor industry are introduced and discussed. |
Monday, October 3, 2022 3:00PM - 3:30PM |
DM2.00006: Coffee Break
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Monday, October 3, 2022 3:30PM - 4:15PM |
DM2.00007: Quantitative Control of Plasma and Surface Reactions for Dielectric Film Etching Invited Speaker: Tetsuya Tatsumi According to the IRDS, along with the progress of miniaturization in the future, technologies to control the processing at the atomic level to respond to new materials and new structures will be required. However, plasma and surface reactions are still often treated as black boxes in dry etching process control, and quantitative understanding and control of plasma processes will be more important for achieving high-precision processing. This paper briefly outlines the development history of dielectric film dry etching equipment and processes and describes what is required for processing at the atomic layer level. In the 1980s and 90s, the development of a plasma sources with a high ion flux to increase the etch rate of SiO2, and a process that strictly controlled the number of electron collisions (τne<σv>) to suppress excessive dissociation of gas molecules to achieve high selectivity was established. With the advent of low-k materials to realize high-speed, low-power-consumption devices, around 2000, a model for more delicate control of surface reactions and techniques for predicting incident flux have been proposed. From 2010 onwards, techniques for predicting damage that cannot be observed with an electron microscope have been required. The energy distribution of incident ions and the penetration depth of high-energy ions and/or photons have been quantitatively controlled. More recently, there have been active discussions about SiO2 ALE. In this process, however, since the reaction does not stop by self-limiting, it is necessary to predict and control the surface reaction when using plasma in the transient state before reaching the steady state. We believe that technologies such as plasma monitoring, modeling, and prediction technologies will be further improved, and future atomic-level manufacturing technologies will be realized. |
Monday, October 3, 2022 4:15PM - 5:00PM |
DM2.00008: Plasma for a clean and carbon-neutral world Invited Speaker: Dae Hoon Lee Various carbon-neutral technologies are being introduced to prevent global warming, which is becoming more and more serious. CO2 emissions are mostly from the production and use of energy, and in most developed countries, CO2 emissions in industrial section account for the largest share. In the process of energy production, especially in the process of creating ‘heat’, CO2 is generated due to the combustion of diverse fossil fuel. |
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