Bulletin of the American Physical Society
75th Annual Gaseous Electronics Conference
Volume 67, Number 9
Monday–Friday, October 3–7, 2022;
Sendai International Center, Sendai, Japan
The session times in this program are intended for Japan Standard Time zone in Tokyo, Japan (GMT+9)
Session DF1: Plasmas and Nanotechnology III |
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Chair: Renato Camata, University of Alabama Room: Sendai International Center Tachibana |
Friday, October 7, 2022 8:00AM - 8:30AM |
DF1.00001: Microplasma Engineering of Functional Nanomaterials: Synthesis and Applications Invited Speaker: Wei-Hung Chiang Microplasmas are a special class of electrical discharges formed in geometries where at least one dimension is less than 1 mm. As a result of their unique scaling, microplasmas operate stably at atmospheric pressure and contain large concentrations of energetic electrons (1-10 eV). These properties are attractive for a range of nanomaterials synthesis and nanostructure engineering such as metal nanostructures and semiconductor nanomaterials. Recently, we found that the energetic species including radicals, ions and electrons generated in the microplasmas were capable of initiating electrochemical-assisted reactions for the nucleation and growth of graphene quantum dots (GQDs), silicon quantum dots (SiQDs), and metal nanoclusters (MNCs). Moreover we develop a simple synthesis of core/shell metal heterostructures using an atmospheric-pressure microplasma-assisted electrochemical method. In this presentation, I will discuss these topics in detail, highlighting the advantages of microplasma-based systems for the synthesis of well-defined nanomaterials and possible applications. These experiments will aid in the rational design and fabrication of nanomaterials and may also have significant impact in emerging applications. |
Friday, October 7, 2022 8:30AM - 8:45AM |
DF1.00002: Multiscale transport modeling of reactive sputtering for fabrication of neuromorphic hardware Luca Vialetto, Rouven Lamprecht, Christian Stuewe, Torben Hemke, Finn Zahari, Hermann Kohlstedt, Thomas Mussenbrock, Jan Trieschmann Conventional computer technology is facing scaling limitations related to hardware architecture and power consumption. To overcome these limitations, memristive devices are currently under investigation in neuromorphic hardware that draws inspiration from biological principles. However, the reliable fabrication of memristive devices remains challenging, as the variation of electrical device properties is often severe. In particular, characteristics of devices have shown a strong correlation with plasma parameters used for deposition of thin films. In this work, a multiscale model for reactive sputter deposition of metal oxides is used to complement the experiments and assess the quantities that mainly influence the resulting properties of the deposited films. The model relates on a hybrid scheme for the plasma, test-particle simulations for the sputtered particle transport, and a kinetic Monte Carlo model for thin film growth. As a results of the study, the main plasma parameters, such as electron temperature and distribution of energetic ions, and their relation with electrical properties of the memristive devices produced on one wafer are presented. |
Friday, October 7, 2022 8:45AM - 9:00AM Author not Attending |
DF1.00003: Ion fluxes in EUV-induced plasma and their applications for optical components tests Andrey Ushakov, Jacqueline van Veldhoven, Chien-Ching Wu, Michel van Putten, Joop Meijlink In modern Extreme Ultra-violet (EUV) lithography machines, sensitive optical components, like multi-layer mirrors and photomasks, may be affected by plasma interactions. The new 13.5 nm research and testing system, EUV-Beam-Line 2 (EBL2), designed to provide accelerated tests for next generation lithography, is used to investigate EUV-induced plasma phenomena. Ions, radicals and secondary electrons emitted from the plasma may influence the lifetime and the performance of contact-sensitive components of the lithography optics such as multi-layer mirrors, photomasks and pellicles. First systematic measurements of ion fluxes produced in an EUV-induced hydrogen plasma are reported, with operating conditions including 5 and 20 Pa gas pressure, 3 kHz EUV pulse repetition rate and 4.2 W total EUV beam power produced in a 10-15 ns EUV pulse. Space- and time-resolved distributions of ion fluxes and ion energies were measured using a retarding-field ion energy analyzer mounted next to the EUV beam. Typical ion energies were in the range of 1-8 eV and typical ion fluxes were in the range of 2-8·1017 ions·m-2s-1. The obtained ion fluxes are applied in a photomask lifetime test to understand the material effects after an EUV exposure. |
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