73rd Annual Gaseous Electronics Virtual Conference
Volume 65, Number 10
Monday–Friday, October 5–9, 2020;
Time Zone: Central Daylight Time, USA.
Session JT4: High-pressure Discharges and Microdischarges
1:00 PM–2:30 PM,
Tuesday, October 6, 2020
Chair: Toshiro Kaneko, Tohoku University, Japan
Abstract: JT4.00001 : Thomson scattering diagnostics of a streamer discharge in atmospheric-pressure air and laser-produced plasmas for light sources
1:00 PM–1:30 PM
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Abstract
Author:
Tomita Kentaro
(Interdisciplinary Graduate School of Engineering and Sciences, Kyushu University)
Laser Thomson scattering (LTS) is well-known as a powerful technique to
measure electron density (n$_{\mathrm{e}})$, electron temperature
(T$_{\mathrm{e}})$, averaged ionic charge ($Z)$, and so on. LTS yields local
values with high temporal resolutions. In this paper, collective and
non-collective Thomson scattering measurements for two types of industrial
plasmas are described. One is a streamer discharge in atmospheric-pressure
air. The other one is laser-produced plasmas for extreme ultra-violet (EUV)
lithography.
Streamer discharge in atmosphere-pressure air has been studied for a long
time and is used for various applications. To analyze the production
mechanism of reactive species, information on electrons, especially for the
electron velocity distribution function (EVDF) is crucial. The EVDF are
provided by solving the electron Boltzmann equation. However, there has been
no direct measurement of the EVDF in the air streamer. Then, LTS was
performed to measure the EVDF of the air streamer. It was found that the
measured EVDF clearly deviated from the Maxwellian distribution, as
predicted by the Boltzmann equation.
Extreme-ultraviolet (EUV) lithography is a promising technology for
high-volume manufacturing of next-generation semiconductor devices.
Laser-produced Sn plasma is known to show sharp and strong spectrum in the
EUV regime (at $\lambda =$13.5 nm). However, the optimization of Sn plasma
requires to measure and control Z and T$_{\mathrm{e}}$ in the region of
larger ion density (n$_{\mathrm{i}})$ within the etendue limit. However,
these parameters (Z, T$_{\mathrm{e}}$ and
n$_{\mathrm{i}}=$n$_{\mathrm{e}}$/Z) have never been measured owing to the
extremely small size (\textasciitilde 500 $\mu $m) and short lifetime
(\textasciitilde 20 ns). We performed LTS measurement. Then, time-resolved
and two-dimensional profiles of n$_{\mathrm{e}}$, T$_{\mathrm{e}}$, and Z of
the EUV light sources were revealed. As the result, 1) a characteristic
hollow-like density profile was observed, 2) significant amount of “useless”
Sn ions should exist within the limited etendue, whose temperature was too
low to contribute EUV emission.