Bulletin of the American Physical Society
70th Annual Gaseous Electronics Conference
Volume 62, Number 10
Monday–Friday, November 6–10, 2017; Pittsburgh, Pennsylvania
Session BM1: Practical Challenges for Industry |
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Chair: Douglas Keil, LAM Room: Salon D |
Monday, November 6, 2017 2:00PM - 2:30PM |
BM1.00001: Use of plasma sensors combined with artificial intelligence in the diagnostics and monitoring of plasma processes. Michael Hopkins, Cliodhna Harrison, Paul Scullin, David Gahan In processes using plasma the general practice is to use limited diagnostics to analyze the plasma in the development phase. Plasma measurement is not generally used to monitor the process during production when the plasma is manufacturing product. The main reason appears to be linked to the cost and complexity of the plasma measurement systems. With the growth of big data there is a renewed interest in applications where internet enabled sensors are deployed to monitor the performance of high cost capital equipment and improve productivity and reduce cost. In this paper we examine data measured from plasma processes and analyzed automatically. The measurement data is combined with context data which defines the state of the plasma processes, type of chamber, gas type, pressure, power and any other relevant parameter. The data is collected and stored in a data base. Software scripts can read the data base and display the data using complex visualization techniques. A model of each process is developed and stored. Subsequent out of sample data is then analyzed, stored and an automatic report generated describing the plasma state and any deviation from expected values. The report is designed to be read by an engineer, who is not necessarily a plasma expert and contains text and graphs. This is an attempt to create an expert system to implement plasma diagnostics as part of routine monitoring of plasma processes. We will outline in more detail the concept and techniques and report our initial outcomes and show examples of the reports generated. [Preview Abstract] |
Monday, November 6, 2017 2:30PM - 3:00PM |
BM1.00002: The significance of RF power delivery for thin-film semiconductor plasma processes and the enhancements of innovative solutions David J. Coumou Many critical technologies rely on plasma-based material processing. Plasma processing is one of the cornerstone technologies for the semiconductor industry for its significant role in material surface interactions, thereby broadly impacting other market sectors such as display technologies, energy efficient building supplies, flexible electronics, bio-compatible materials and devices, and low cost photovoltaics. From film growth to patterning structures in high-volume manufacturing environments, a key subsystem enabling this breadth of capability is the RF power delivery systems. In this talk, we explore advances in RF power delivery systems with corresponding enablement of plasma processes ameliorating many advanced manufacturing processes. We start with basic fundamental plasma physics and the interaction of RF coupling to plasma densities. These influences are then leveraged to improve uniformity and sheath voltage tailoring for ion energy control. We exploit this capability for both inductive and capacitively coupled plasma reactors used in semiconductor manufacturing. We include the advent of evolving technologies for the enhancement of distortion cancellation prevalent in multi-frequency reactors and RF power delivery factors to improve chamber matching. [Preview Abstract] |
Monday, November 6, 2017 3:00PM - 3:30PM |
BM1.00003: Plasma etch reactor design challenges for high RF power applications Alexei Marakhtanov Plasma etching of dielectric structures of advanced semiconductor devices faces multiple challenges due to the requirements posed by scaling at advanced technology nodes. Increasing high aspect ratio of next generation memory devices requires substantial increase in ion energy and ion flux with nearly perfect plasma uniformity above the substrate. To meet these process requirements, design of small volume confined plasma reactor becomes a technical challenge. New aspects of the design, such as voltage and power management with increased applied RF powers will be discussed in this presentation. [Preview Abstract] |
Monday, November 6, 2017 3:30PM - 4:00PM |
BM1.00004: Atomic Layer Processing of Silicon Dielectrics: Precursors, Processes, and Plasmas David C. Smith Atomic layer deposition (ALD) and atomic layer etching (ALE) are advanced methods for achieving the formation of nanometer-sized features. Plasma-assisted ALD is the best-known method to meet low temperature (\textless 500 $^{\mathrm{o}}$C) requirements and is now being used for depositing conformal silicon dielectrics such as silicon oxide (SiO$_{\mathrm{2}})$ and silicon nitride (Si$_{\mathrm{3}}$N$_{\mathrm{4}})$. Atomic layer etching (ALE) is an advanced etch technique used in the fabrication of 10 nm logic devices. By virtue of its separated and self-limiting steps, ALE offers a simplified system in which to understand etch mechanisms. The current state of the art of chemistries, plasmas, and process conditions required for the processing of silicon dielectrics by plasma ALD and ALE will be discussed. [Preview Abstract] |
Monday, November 6, 2017 4:00PM - 4:30PM |
BM1.00005: Advanced HIPIMS solution for R&D and Process Development Sean Armstrong When HIPIMS was first introduced to the thin film coating industry, it was considered an advanced technique for production applications, which would provide optimal film properties and wear resistance. The HIPIMS supply options were very large scale directly suited to the production industry. However, it was found to have significant limitations in rate, which minimized its acceptance in production applications. Recently, the introduction of smaller scale supplies triggered an emergence of the technology into the R&D community. This enabled a high rate of enhancements and helped innovate a more efficient capability and process optimization that could be utilized by HIPIMS supplies. This ultimately re-energized the interest and potential of HIPIMS in the thin film coating industry. One of the solutions to emerge from the crowd was the IMPULSE supply, which brings a unique range of features to the HIPIMS community. The IMPULSE is a 2kW supply that is offered in a single and dual configuration. It features touch panel controllability, the fastest pulse frequency, 200A peak current, and the most competitive pricing in the industry. The supply is slave capable and can be scaled from its 2kW standard configuration by adding additional units. This makes it an excellent option for process development. Test results will be shared that show its unique performance capabilities and compatibility with higher scale power requirements. [Preview Abstract] |
Monday, November 6, 2017 4:30PM - 5:00PM |
BM1.00006: Practical challenges for the integration and application of plasmas in atomic layer deposition systems J. R. Gaines Atomic Layer Deposition (ALD) is the fastest growing thin film deposition technology, for 2017 and for foreseeable future. Increased complexity impressed on the semiconductor industry in the transition to 3 dimensional transistor designs and the traditional pressures on device density make ALD a natural tool for current and future challenges. The design shift to 3D structures substantially complicates the development of robust ALD processes for certain materials. The chemical mechanisms at the heart of ALD in some cases require additional energy beyond what can be promoted through high temperature reactions. Certainly, for certain iconic materials such as platinum, plasmas much be integrated into the ALD system to achieve high quality results. In this presentation specific issues related to the integration and application of plasma technology to the chemical deposition of molecules on solid substrates will be reviewed. [Preview Abstract] |
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