69th Annual Gaseous Electronics Conference
Volume 61, Number 9
Monday–Friday, October 10–14, 2016;
Bochum, Germany
Session Index
Session NW2: Plasma Etching
Focus
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Show Abstracts |
Chair: Pascal Chabert, Ecole Polytechnique
Room: 2a
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Wednesday, October 12, 2016
3:00PM - 3:30PM
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NW2.00001: Layer by layer etching of LaAlSiO$_{\mathrm{x}}$
Invited Speaker:
Hisataka Hayashi
Preview Abstract |
Wednesday, October 12, 2016
3:30PM - 3:45PM
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NW2.00002: Variation in photon-induced interface defects due to transient behavior of pulse modulated inductively coupled plasma
Y. Miyoshi, M. Fukasawa, K. Nagahata, T. Tatsumi, Z. Liu, Y. Zhang, A. Ando, K. Takeda, K. Ishikawa, M. Sekine, M. Hori
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Wednesday, October 12, 2016
3:45PM - 4:00PM
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NW2.00003: Computer modelling of cryogenic etching in SF6/O2/SiF4 and CxFy inductively coupled plasmas
Quan-Zhi Zhang, Annemie Bogaerts
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Wednesday, October 12, 2016
4:00PM - 4:15PM
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NW2.00004: Temporal evolution of as-developed line and space photoresist profiles during etch.
Barton Lane, Peter Ventzek, Alok Ranjan, Vinayak Rastogi, Jun Yoshikawa
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Wednesday, October 12, 2016
4:15PM - 4:30PM
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NW2.00005: Origin of plasma-induced surface roughening and ripple formation during plasma etching
Kouichi Ono, Nobuya Nakazaki, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi
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Wednesday, October 12, 2016
4:30PM - 4:45PM
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NW2.00006: Tailored Voltage Waveforms in an SF6/O2 discharge: slope asymmetry and its effect on surface nanotexturing of silicon
G. Fischer, E. Drahi, G. Poulain, B. Bruneau, E. V. Johnson
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Wednesday, October 12, 2016
4:45PM - 5:00PM
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NW2.00007: WITHDRAWN ABSTRACT
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