Bulletin of the American Physical Society
68th Annual Gaseous Electronics Conference/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing
Volume 60, Number 9
Monday–Friday, October 12–16, 2015; Honolulu, Hawaii
Session SF1: Atmospheric Plasmas II |
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Chair: Francesco Fracassi, University of Bari Room: 301 B |
Friday, October 16, 2015 8:00AM - 8:15AM |
SF1.00001: Generation of self-organized micro-gap discharge using sapphire dielectrics Md. Anwarul Islam, Shizuka Tada, Kosuke Jumonji, Seiji Mukaigawa, Koichi Takaki Micro-plasma generated dielectric barrier discharge with independently self-organized structure under certain conditions and plasma photonic crystals (PPC) have been obtained by the self-organization of filaments in an atmospheric dielectric barrier discharge, which has attracted significant attention. In the present study, atmospheric pressure micro-gap discharge was generated by using sapphire and glass dielectric. Since the charge accumulated in the dielectric is estimated to an important factor that affects the state of DBD, and also affects the self-organized structure. Discharge duration has an impact on self-organized mode and glow mode discharge, has carefully compared here with analysis. Here we have compared the discharge current and breakdown voltage phenomena between sapphire and glass dielectric. Moreover, electron density and current density for different dielectric materials has compared as it is principal parameters to show plasma density. On the other hand, filament structures got from ICCD camera were also observed and examined to get proper hexagonal structure which can effect self-organization of filaments as well. [Preview Abstract] |
Friday, October 16, 2015 8:15AM - 8:30AM |
SF1.00002: Reaction mechanism of hydrogen generation from ammonia by DBD pulsed plasma Toko Kawaoka, Yu Inoue, Shinji Kambara Ammonia has a number of favorable characteristics, the primary one being its high capacity for hydrogen storage, 17.6 percent, based on its molecular structure. The secondary advantage is that ammonia is carbon-free at the end users, although CO2 emission on production of ammonia is dependent on the source of energy. Therefore, ammonia is the promising chemical species as a hydrogen carrier. The purpose of this study is to clarify the elementary reaction mechanism of hydrogen generation from ammonia by DBD pulsed plasma. Effect of applied voltages, gas flow rates and concentration of ammonia was investigated, and then behavior of hydrogen generation in the DBD reactor was calculated using an elemental chemical reaction model. Analysis of reaction pathways indicated that reaction rate of hydrogen generation by ammonia decomposition in the DBD reactor was 10E9 times faster than the usual thermal decomposition. [Preview Abstract] |
Friday, October 16, 2015 8:30AM - 8:45AM |
SF1.00003: Electron information of single and dual rf driven capacitive discharges at atmospheric pressure Sanghoo Park, Wonho Choe, Se Youn Moon, Jian Jun Shi Driving frequency is one of the most important parameters in low temperature plasma operation due to its strong influence on reactivity and applicability of the plasma in processes such as etching or deposition. As is well known, the dual frequency technology was developed to separately control ion energy and flux in low pressure low temperature plasmas, and it has been widely in practice in industry. In comparison to the low pressure plasma, the role of driving frequency, particularly dual frequency, in electron and ion kinetics has not been much addressed in atmospheric pressure plasmas. In this work, the electrical characteristics and electron information of single (13.56 MHz) and dual frequency (4.52 MHz $+$ 13.56 MHz) atmospheric pressure argon capacitive discharges were experimentally studied within the abnormal $\alpha $-mode regime. The results show that electron density (n$_{\mathrm{e}})$ linearly increases with input rf power while electron temperature (T$_{\mathrm{e}})$ is not influenced substantially in the single frequency plasma. In contrast, independent control of n$_{\mathrm{e}}$ and T$_{\mathrm{e}}$ was achieved in the dual frequency plasma. As the low-frequency voltage increases with the constant high-frequency input power, T$_{\mathrm{e}}$ decreases from 2.5 eV to 1.8 eV, whereas n$_{\mathrm{e}}$ increases from 7.7 $\times$ 10$^{11}$ cm$^{-3}$ to 1.4$\times $10$^{12}$ cm$^{-3}$. [Preview Abstract] |
Friday, October 16, 2015 8:45AM - 9:00AM |
SF1.00004: Power Control Method for Atmospheric-Pressure Plasma Generator with Electrode Array Hiroyasu Takei, Satoshi Kurio, Satoshi Matsuyama, Kazuto Yamauchi, Yasuhisa Sano In semiconductor, oxide material, and optical element processing, the processing time must be precisely controlled in each area, and the throughput needs to be reduced. Therefore, we proposed a numerically controlled sacrificial atmospheric-pressure plasma oxidation process and experimentally produced an atmospheric-pressure plasma generator with an electrode array. In this paper, we experimentally produced an atmospheric-pressure plasma generator with an electrode array and conducted NC plasma oxidation experiments. In the proposed NC sacrificial oxidation process, it is necessary to control the power so as to maintain a constant oxidation rate, because the plasma area changes during processing. Therefore, we demonstrated effective monitoring of the electrode voltage for this purpose. Finally, we successfully formed oxide films with nanometer thickness accuracy. We expect that this finding will contribute to improving the accuracy of various plasma processes in the future. [Preview Abstract] |
Friday, October 16, 2015 9:00AM - 9:15AM |
SF1.00005: Atmospheric Pressure Thermal-Plasma-Jet Oxidation of 4H-SiC Ryosuke Ishimaru, Hiroaki Hanafusa, Keisuke Maruyama, Seiichiro Higashi One of the most serious problem to improve the performance of SiC-MOSFET is existence of a large amount of interface state between the insulating film and SiC substrate. It is considered that these defects occur due to carbon desorption during oxidation process. In order to contribute to find solutions for this issue, further investigation of oxidation of SiC wafer is necessary. We have investigated the method of high temperature and rapid oxidation of SiC wafer using atmospheric-pressure thermal-plasma-jet (TPJ) in an atmospheric ambient. TPJ oxidation can provide rapid heating and cooling, and higher oxidation temperature which are difficult to realize by other equipment. This study demonstrates oxidation of 4H-SiC using proposed TPJ oxidation, and intends to obtain knowledge about oxidation at over 1300 $^{\circ}$C. For the sample oxidized at 1480 $^{\circ}$C on average, 18.7 nm SiO$_{2}$ layer was formed within 30 s, and the interface state density of 2.3 x 10$^{12}$ cm$^{-2}$eV$^{-1}$ at 0.2 eV from the conduction band edge was obtained. This value is comparable to that of the sample of dry oxidation at 1200 $^{\circ}$C. In addition, TPJ oxidation has a possibility of a reduction of oxidation time and process costs, because its oxidation rate was about four times as large as that of dry oxidation at 1300 $^{\circ}$C. [Preview Abstract] |
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