Bulletin of the American Physical Society
68th Annual Gaseous Electronics Conference/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing
Volume 60, Number 9
Monday–Friday, October 12–16, 2015; Honolulu, Hawaii
Session NR2: Plasma CVD/Radical Assisted CVD |
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Chair: Kazunori Koga, Kyushu University Room: 308 AB |
Thursday, October 15, 2015 8:00AM - 8:15AM |
NR2.00001: Spectroscopic studies of MW plasmas containing HMDSO, O$_{2}$ and N$_{2}$ Andy Nave, Juergen Roepcke, Felix Mitschker, Peter Awakowicz The deposition of SiO$_{\mathrm{x}}$ layers based on organosilicon plasmas is used to implement advantageous mechanical, electrical, and/or optical properties on various substrates. The development of such coating processes resulting in a wide range of chemical and physical film properties, using hexamethyldisiloxane (HMDSO) as a precursor, has been in the center of interest of various studies. In plasma, the dissociation of HMDSO into a large amount of fragments is a complex chemical phenomenon. The monitoring of the precursor and of formed species is very valuable to understand the plasma chemistry. Infrared absorption spectroscopy based on lead salt lasers and EC Quantum Cascade Laser have been used to monitor the concentrations of HMDSO, and of the reaction products CH$_{4}$, C$_{2}$H$_{2}$, C$_{2}$H$_{4}$, C$_{2}$H$_{6}$, CO, CO$_{2}$ and CH$_{3}$ as a function of the HMDSO/O$_{2}$ mixture ratio, and the power at various pressures in a MW plasma deposition reactor. Optical emission spectroscopy has been applied as complementary diagnostics to evaluate electron density and electron temperature. [Preview Abstract] |
Thursday, October 15, 2015 8:15AM - 8:30AM |
NR2.00002: Study of O$_{3}$-TEOS SiO$_{2}$ Cladding for Silicon Photonics Devices Keizo Kinoshita, Tsuyoshi Horikawa, Daisuke Shimura, Hiroyuki Takahashi, Tohru Mogami Silicon Photonics (SiPh) is a promising technology for large-capacity and wide-band data communications for the distance from millimeter to 100 meters which corresponded well to data center applications. This paper describes about O$_{3}$-TEOS SiO$_{2}$ film developments as an upper cladding over Si waveguide core fabricated on silicon-on-insulator wafers. It was compared with a plasma-enhanced chemical-vapor-deposition (PE-CVD) SiO$_{2}$ film used widely as the cladding material. The O$_{3}$-TEOS SiO$_{2}$ showed very high gap-fill characteristic at parallel arrangement of two waveguides. However, its propagation loss was 1.83 dB/cm which is three times larger than that of the conventional PE-CVD SiO$_{2}$ cladding. Chemical analyses by FT-IR and TDS for these two types of cladding films were carried out to clarify this reason. It was clearly shown that remained water within the O$_{3}$-TEOS SiO$_{2}$ cladding could cause the larger propagation loss by O-H stretching absorption. The water exclusion procedure should be developed to apply O$_{3}$-TEOS SiO$_{2}$ for the cladding materials. This work was supported by NEDO. [Preview Abstract] |
Thursday, October 15, 2015 8:30AM - 8:45AM |
NR2.00003: Low temperature synthesis of silicon nitride thin films deposited by VHF/RF PECVD for gas barrier application Jun S. Lee, Kyung S. Shin, B.B. Sahu, Jeon G. Han In this work, silicon nitride (SiNx) thin films were deposited on polyethylene terephthalate (PET) substrates as barrier layers by plasma enhanced chemical vapor deposition (PECVD) system. Utilizing a combination of very high-frequency (VHF 40.68 MHz) and radio-frequency (RF 13.56 MHz) plasmas it was possible to adopt PECVD deposition at low-temperature using the precursors: Hexamethyldisilazane (HMDSN) and nitrogen. To investigate relationship between film properties and plasma properties, plasma diagnostic using optical emission spectroscopy (OES) was performed along with the film analysis using Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). OES measurements show that there is dominance of the excited N2 and N2+ emissions with increase in N2 dilution, which has a significant impact on the film properties. It was seen that all the deposited films contains mainly silicon nitride with a small content of carbon and no signature of oxygen. Interestingly, upon air exposure, films have shown the formation of Si-O bonds in addition to the Si-N bonds. Measurements and analysis reveals that SiNx films deposited with high content of nitrogen with HMDSN plasma can have lower gas barrier properties as low as ~ 7.3 x 10-3 g/m2/day. [Preview Abstract] |
Thursday, October 15, 2015 8:45AM - 9:00AM |
NR2.00004: Development of high-density radical source and its application to high-speed growth of nitride semiconductors by plasma-assisted molecular beam epitaxy Hiroki Kondo, Yukinori Kiheida, Hiroyuki Kano, Yvon Cordier, Phannara Aing, Olivier Grange, Yuri Tsutsumi, Osamu Oda, Masaru Hori, Hiroshi Amano The high-density radical source (HDRS) was developed to improve growth characteristics of plasma-assisted molecular beam epitaxy (PA-MBE) and its film qualities. The growth rate of GaN and InGaN by the PA-MBE is generally much lower than that by a conventional metal organic vapor phase epitaxy (MOVPE). To improve the growth rate of PA-MBE, we have developed the HDRS, which can realize a nitrogen radical density up to 3x10$^{12}$ cm$^{-3}$. Then, a faster growth rate of 2.5$\mu$m/h in GaN homoepitaxy have been performed employing the HDRS. The growth rate of InGaN was also enhanced by this method. In general, mosaicity of the epilayer confirmed using the X-ray omega rocking curve (XRC) increased with increasing In content in the case using the ICP. However, that by the HDRS hardly changed even at the In content of 16{\%}. Incorporation of impurity was also suppressed according to secondary ion mass spectrometry (SIMS) results. Fine and uniform photoluminescence emission was also confirmed at the whole region of substrates. These results indicate high potential of the HDRS to realize the high-rate growth of high quality and high-In content InGaN. [Preview Abstract] |
Thursday, October 15, 2015 9:00AM - 9:15AM |
NR2.00005: Reactive radical production and transport analysis in ammonia-hydrogen-argon microwave plasmas Toshihiko Iwao, Peter Ventzek, Rochan Upadhyay, Laxminarayan Raja, Kiyotaka Ishibashi High quality conformal dielectric films are playing an ever increasing role in advanced semiconductor device and memory manufacturing. Plasma-enhanced atomic layer deposition (PEALD) meet both quality and throughput requirements. For dielectric film PEALD, the attributes of microwave plasmas are important for the prevention of wafer device damage that occurs when other plasmas are used. With its advantages, PEALD brings with it complexity. In this presentation we present the results from an investigation of radical species generation and transport phenomena using ``VizGlow'' [1] a multi-dimensional plasma simulation tool. In the computational model, the ammonia, hydrogen, and argon mixture plasma chemistry for silicon nitride deposition is based on work by Arakoni et.al. [2]. From our investigation we are able to show the important role radical-ion chemistry plays and relate these results to basic process properties.\\[4pt] [1] ``VizGlow: Plasma Modeling Software for Multi-Dimensional Simulations of Non-Equilibrium Glow Discharge Systems'' Theory Manual, version 2.1, Esgee Technologies Inc.\\[0pt] [2] Arakoni, et. al., J. Phys. D: Appl. Phys. 40 (2007) 2476-2490 [Preview Abstract] |
Thursday, October 15, 2015 9:15AM - 9:30AM |
NR2.00006: Plasma CVD synthesis of new diamond-bismuth thin films by solid-source immersion Takahiro Tamura Doping various elements to carbon is gathering much attention recently. In particular, doping to diamond is attractive for various applications, but it is extremely difficult except for a very few numbers of elements (e.g. N, P and B). Since the search for dopants and their combinations is still underway, a simple and versatile technique for the doping to the diamond has been awaited. We have developed a new method for the doping to diamond, which is simply immersing a solid source in the CVD plasma. We used this technique to examine the possibility to dope bismuth to the diamond. It was necessary to make a device to let bismuth seep into the CVD plasma because of its low melting temperature. The grown samples were characterized by X-ray fluorescence, X-ray diffraction, Raman spectroscopy, TEM, XPS and electrochemical cyclic voltammetry. We found nanoparticles of an unusual carbon allotrope (Chaoite) at grain boundaries of diamond microcrystals. Most of the bismuth was included among the nanoparticles. Molecule-like Raman spectra were observed from the film, which suggests the existence of various carbon nanostructures. [Preview Abstract] |
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