Bulletin of the American Physical Society
68th Annual Gaseous Electronics Conference/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing
Volume 60, Number 9
Monday–Friday, October 12–16, 2015; Honolulu, Hawaii
Session JW1: GEC & ICRP Plenary Sessions, Business Meeting |
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Chair: Hirotaka Toyoda Mirko Vukovic, Nagoya University, TEL Technology Center America Room: 311 |
Wednesday, October 14, 2015 10:00AM - 11:00AM |
JW1.00001: Plasma-surface interactions for top-down and bottom-up nanofabrication Invited Speaker: Kouichi Ono Plasma processing is now widely employed for the fabrication of nanostructures in diverse fields of micro/nanoelectronic, optoelectronic, energy conversion, and sensing devices. The top-down plasma processes are indispensable in today's microelectronics industry, relying on the use of primarily anisotropic plasma etching following the lithography to define mask patterns; in some cases, self-assembled masks are served for the subsequent etching. The bottom-up ones are often employed to synthesize nanostructures such as nanotubes and nanowires, relying on the use of plasma enhanced chemical vapor deposition and plasma sputtering on self-assembled as well as lithographically formed patterns of metal catalysts. Moreover, the mask-less top-down approaches have recently been demonstrated to form nanopillars and periodic nanoripples, and the catalyst-free bottom-up approaches have been demonstrated to form nanowires. This talk is concerned with the current understanding and future prospects for plasma-surface interactions responsible for these top-down and bottom-up plasma nanofabrication processes, with attention placed on the fabrication of nanoscale fins and gates and also nanowires of silicon. On nanometer scale, ions and neutrals incident on surfaces are few in number during processing; thus, the nanoscale plasma-surface interactions concerned are stochastic, owing to the temporal as well as spatial uniformity of the incident flux and angle of them on surfaces being processed at nanoscale. [Preview Abstract] |
Wednesday, October 14, 2015 11:00AM - 12:00PM |
JW1.00002: The Gaseous Electronics Conference in its seventh decade: some new problems in an old field Invited Speaker: Timothy Gay Our understanding of scattering processes involving atoms and molecules is the foundation of the science of gaseous electronics. As fields of physics and chemistry, both atomic and molecular collisions and gaseous electronics originated in the early 20th century, and they have developed symbiotically and in parallel since then. Despite a century of progress since the Franck-Hertz experiment however, it is fair to say that the field of atomic and molecular collisions is old and well-explored, but not mature. While the electron-atomic hydrogen problem has been solved in complete detail [1], there are large regions in the ``great outback'' of the periodic table where either theory or experiment (or both) are nonexistent, or there is little correlation between the two. The problem becomes dramatically worse with molecules, including those with just one atom too many [2]. As applications of gaseous electronics have become both more sophisticated and more complicated, the demands for basic, accurate cross section data, especially for heavy, polyatomic molecular constituents, have escalated accordingly. This talk will review the status of our theoretical understanding of atomic and molecular collisions, and will present several case studies involving targets of He, H$_{2}$, Zn, H$_{2}$O, and C$_{10}$H$_{15}$IO to illustrate current problems in the field. We will also consider crucial needs for basic collisional data in recent applied plasma science problems [3]. \\[4pt] [1] T.N. Rescigno, M. Baertschy, W.A. Isaacs, and C.W. McCurdy, Science \textbf{286}, 2474 (1999)\\[0pt] [2] J.W.Maseberg, K. Bartschat, and T.J.Gay, Phys. Rev. Lett. \textbf{111}, 253201 (2013)\\[0pt] [3] See. e.g., N. Mason, http://meetings.aps.org/link/BAPS.2013.GEC.ET5.2 [Preview Abstract] |
Wednesday, October 14, 2015 12:00PM - 1:00PM |
JW1.00003: GEC Business Meeting |
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