Bulletin of the American Physical Society
68th Annual Gaseous Electronics Conference/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing
Volume 60, Number 9
Monday–Friday, October 12–16, 2015; Honolulu, Hawaii
Session GT1: Poster Session I (4:00pm - 6:00 pm)
Tuesday, October 13, 2015
Room: Exhibit Hall III
Abstract ID: BAPS.2015.GEC.GT1.155
Abstract: GT1.00155 : Measurement of absolute density of N atom in sputtering plasma for epitaxial growth ZnO films via nitrogen mediated crystallization*
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*This work was supported in part by Japan Society for the Promotion of Science KAKENHI grant number 15H05431.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2015.GEC.GT1.155
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