Bulletin of the American Physical Society
68th Annual Gaseous Electronics Conference/9th International Conference on Reactive Plasmas/33rd Symposium on Plasma Processing
Volume 60, Number 9
Monday–Friday, October 12–16, 2015; Honolulu, Hawaii
Session GT1: Poster Session I (4:00pm - 6:00 pm)
4:00 PM,
Tuesday, October 13, 2015
Room: Exhibit Hall III
Abstract ID: BAPS.2015.GEC.GT1.150
Abstract: GT1.00150 : Measurements of nitrogen atom density in N2/Ar sputtering plasma for fabrication of high-mobility amorphous In2O3:Sn films
Preview Abstract
Abstract
Authors:
Toshiyuki Takasaki
(Kyushu University)
Tomoaki Ide
(Kyushu University)
Koichi matsushima
(Kyushu University)
Keigo Takeda
(Nagoya University)
Masaru Hori
(Nagoya University)
Daisuke Yamashita
(Kyushu University)
Hyumwoon Seo
(Kyushu University)
Kazunori Koga
(Kyushu University)
Masaharu Shiratani
(Kyushu University)
Naho Itagaki
(Kyushu University)
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2015.GEC.GT1.150
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