Bulletin of the American Physical Society
67th Annual Gaseous Electronics Conference
Volume 59, Number 16
Sunday–Friday, November 2–7, 2014; Raleigh, North Carolina
Session ET2: Modeling of Plasma Etching
1:30 PM–3:00 PM,
Tuesday, November 4, 2014
Room: State C
Chair: Douglas Keil, Lam Research
Abstract ID: BAPS.2014.GEC.ET2.4
Abstract: ET2.00004 : Modeling of plasma-induced damage during the etching of ultimately-scaled transistors in ULSI circuits---A model prediction of damage in three dimensional structures*
2:15 PM–2:45 PM
Preview Abstract
Abstract
Author:
Koji Eriguchi
(Kyoto University)
*This work was supported in part by Grant-in-Aid for Scientific Research (B) 23360321 from JSPS and STARC project.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2014.GEC.ET2.4
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