Bulletin of the American Physical Society
66th Annual Gaseous Electronics Conference
Volume 58, Number 8
Monday–Friday, September 30–October 4 2013; Princeton, New Jersey
Session MR1: Poster Session III (8:00-9:30AM)
8:00 AM,
Thursday, October 3, 2013
Room: Ballroom Foyer
Abstract ID: BAPS.2013.GEC.MR1.51
Abstract: MR1.00051 : Growth of Amorphous Silicon Nitride Films on Silicon Wafer by Atmospheric Pressure Plasma Jet*
Preview Abstract Abstract
Authors:
Xueqiang Zhang
(Radiation Laboratory \& Department of Chemistry and Biochemistry, University of Notre Dame)
Sylwia Ptasinska
(Radiation Laboratory \& Department of Physics, University of Notre Dame)
*This work is supported by Department of Energy
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2013.GEC.MR1.51
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