66th Annual Gaseous Electronics Conference
Volume 58, Number 8
Monday–Friday, September 30–October 4 2013;
Princeton, New Jersey
Session Index
Session LW1: Plasma Etching
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Chair: Vincent Donnelly, University of Houston
Room: Ballroom I
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Wednesday, October 2, 2013
3:30PM - 4:00PM
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LW1.00001: Challenges in the Plasma Etch Process Development in the sub-20nm Technology Nodes
Invited Speaker:
Kaushik Kumar
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Wednesday, October 2, 2013
4:00PM - 4:15PM
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LW1.00002: Photo-assisted etching of silicon in halogen-containing plasmas
Shyam Sridhar, Weiye Zhu, Lei Liu, Demetre Economou, Vincent Donnelly
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Wednesday, October 2, 2013
4:15PM - 4:30PM
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LW1.00003: Effect of TCP Pulsing in Photon Induced Sub-threshold Etching of Si
Juline Shoeb, Saravanapriyan Sriraman, Tom Kamp, Alex Paterson
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Wednesday, October 2, 2013
4:30PM - 4:45PM
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LW1.00004: Vacuum ultraviolet photon fluxes in argon-containing inductively coupled plasmas
S.B. Radovanov, H.M. Persing, S. Wang, C.L. Culver, J.B. Boffard, C.C. Lin, A.E. Wendt
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Wednesday, October 2, 2013
4:45PM - 5:00PM
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LW1.00005: Reduction Mechanism of Surface Roughness on ArF-Photoresist Using C$_{5}$HF$_{7}$ Gas Plasma
Yudai Miyawaki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Azumi Ito, Hirokazu Matsumoto, Masaru Hori
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Wednesday, October 2, 2013
5:00PM - 5:15PM
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LW1.00006: Molecular Dynamics Analysis of Surface Reaction Kinetics during Si Etching in Cl-based Plasmas: Effects of Etch By-Products Ion Incidence
Nobuya Nakazaki, Yoshinori Takao, Koji Eriguchi, Kouichi Ono
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Wednesday, October 2, 2013
5:15PM - 5:30PM
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LW1.00007: Simulation of microwave pulsing in a radial line slot antenna etch process reactor
Rochan Upadhyay, Kiyotaka Ishibashi, Laxminarayan Raja
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