Bulletin of the American Physical Society
64th Annual Gaseous Electronics Conference
Volume 56, Number 15
Monday–Friday, November 14–18, 2011; Salt Lake City, Utah
Session PR3: Plasma-surface Interactions |
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Chair: Peter Ventzek, Tokyo Electron Ltd. Room: 255F |
Thursday, November 17, 2011 2:00PM - 2:15PM |
PR3.00001: Pore Sealing vs. Surface Densification in Inhibition of O$_{2}$ Plasma Damage in Organosilicates Jeffry Kelber, Swayambhu Behera XPS and FTIR were used to determine effects of surface densification vs. pore sealing on O$_{2}$ plasma-induced carbon loss from organosilicate glass (OSG). O$_{2}$ plasma exposure during photoresist removal induces carbon loss and increased dielectric constant in OSG. He plasma-induced SiO$_{2}$ formation (surface densification) is considered the chief damage inhibition mechanism. However, comparison of OSG pretreatments involving (a) direct He plasma, or (b) He plasma exposure in the presence of a MgF$_{2}$ window (He/MgF$_{2})$, indicates that UV-induced pore sealing in the OSG interior plays a dominant role in inhibition of carbon loss. He plasma pretreatment results in the formation of a $\sim $ 50 angstrom thick SiO$_{2}$ surface layer, whereas He/MgF$_{2}$ pretreatment--which transmits only UV results in $<$ 3 angstroms SiO$_{2}$ formation; yet both He plasma and He/MgF$_{2}$ pretreatments inhibit carbon loss at longer O$_{2}$ plasma exposure times. Results are consistent with findings concerning the role of O radical diffusion down nanopores in the carbon loss process, and O radical diffusion through SiO$_{2}$. UV radiation blocks interconnections between pores in OSG, inhibiting carbon loss. [Preview Abstract] |
Thursday, November 17, 2011 2:15PM - 2:30PM |
PR3.00002: Simulation of the dynamics of a helium discharge in a thin dielectric tube at atmospheric pressure Jaroslav Jansky, Francois Pechereau, Anne Bourdon In this work, we propose to study the dynamics and structure of helium discharges at atmospheric pressure in dielectric tubes. A typical geometry of an atmospheric pressure plasma jet is used: the discharge is initiated in a thin dielectric tube by two annular electrodes around the dielectric tube. The simulations are performed using a 2D axisymmetric fluid model for helium assuming that secondary electron emission at the tube inner surface is only due to ion bombardment. In this work, we propose to study the influence of the electrode set-up (size of ring electrodes and interelectrode gap distance) and the characteristics of the tube (radius and permittivity) on the discharge structure and propagation velocity. The results show that the grounded annular electrode accelerates the discharge propagation in the tube between both electrodes but reduces the discharge propagation velocity in the tube as the discharge escapes from the interelectrode gap. These results are qualitatively in good agreement with experiments and confirm the streamer-like mechanism of generation and propagation of discharges in dielectric tubes. [Preview Abstract] |
Thursday, November 17, 2011 2:30PM - 2:45PM |
PR3.00003: 3D feature profile simulation based on realistic surface kinetic modeling of fluorocarbon plasma etch process Won-Seok Chang, Deuk-Chul Kwon, Dong-Hun Yu, Deog-Gyun Cho, Yeong-Geun Yook, Jin-Tae Kim, Jung-Sik Yoon, Yeon-Ho Im Recently, one of the critical issues in the etching processes is to achieve ultra high deep contact hole without anomalous behaviors such as sidewall bowing and twisting. To address this issue, we have developed a 3D topography simulator using the level set algorithm based on new memory saving technique, which is suitable in the contact hole etching. For this feature profile simulation, we performed a fluorocarbon plasma-surface kinetic modeling based on our experimental data, a polymer layer based this model was proposed as considering material balance of deposition and etching through steady-state FC layer. Finally, the modeling results showed good agreements with experimental data and could be used successfully for 3D etch profile simulations with consideration of polymer layer. [Preview Abstract] |
Thursday, November 17, 2011 2:45PM - 3:00PM |
PR3.00004: Optical Emission Spectroscopy Characterization of Atmospheric Pressure Plasma Removal of High Density Polyethylene Anthony McWilliams, Steven Shannon, Stephen Hudak, Jerry Cuomo Detailed spectroscopic measurements have been made on a hybrid vortex stabilized plasma torch probing the removal of high density polyethylene (HDPE). It has been determined that the dominant removal mechanism is related to the emission intensity of the reactive species present in the plasma through correlating the intensity of the atomic oxygen 777 nm peak with the removal rate as a function of axial distance from the torch. The studies also determined a weak correlation between removal rate and temperature. Further investigation of the removal mechanism has been based on \textit{in situ} OES measurements of the plasma etching HDPE. This enables the comparison of the emission from available plasma reactants to the emission from the products resulting from either direct emission during the reaction phase or indirect reincorporation into the plasma region. Knowledge of the initial reactants and final products permits the formation of a hypothesis on the actual dominant removal mechanism or reaction pathway. [Preview Abstract] |
Thursday, November 17, 2011 3:00PM - 3:15PM |
PR3.00005: Surface Modification of PAN-based Carbon Fiber Using Single and Dual High Frequency RF-PECVD Demiral Akbar, Ummugul E. Gungor, Sinan Bilikmen In this work the effects of the pure nitrogen gas plasma on PAN (Polyacrylonitrile) based carbon fiber surfaces are described. The fiber has been treated by using high frequency capacitively coupled single and dual RF- PECVD systems under different processing conditions; exposure times, RF powers and nitrogen gas pressures. Raman spectroscopy technique is used to characterize the surface structure of the fiber before and after the plasma treatment. It was found that the tensile strain increased when the pressure increased from 0.5 to 0.75 Torr in a single RF CCP system. In case of dual RF CCP with a low power discharge; 50 - 50 W and 30 minute processing time, there will be a compressive strain at a pressure of 0.9 Torr. In contrast, the amount of tensile strain decreases with increasing HF- RF (40.68 MHz) power at constant LF (2.1 MHz) power. Thus, by calculating the surface crystalline size according to intensity ratio of D (1340 cm$^{-1}$) and G (1577 cm$^{-1}$) bands, ID / IG, in the first order region, the crystallization of the carbon fiber has been demonstrated. In addition, the increase in the intensity ratio shows that the plasma treatment process causes more disorder surface structure as compared with the untreated one until the crystallization takes place. [Preview Abstract] |
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