62nd Annual Gaseous Electronics Conference
Volume 54, Number 12
Tuesday–Friday, October 20–23, 2009;
Saratoga Springs, New York
Session GT1: Plasma Aided Implantation
10:00 AM–12:00 PM,
Tuesday, October 20, 2009
Saratoga Hilton
Room: Ballroom 1
Chair: Svetlana Radovanov, Varian Semiconductor
Abstract ID: BAPS.2009.GEC.GT1.1
Abstract: GT1.00001 : Sheath dynamics and energetic particle distributions on substrates
10:00 AM–10:30 AM
Preview Abstract
Abstract
Author:
Michael A. Lieberman
(UC Berkeley)
The energy and angular distributions (EAD's) of energetic
particles arriving at a substrate determine crucial plasma
processing characteristics; thus knowledge and control of the
EAD's are vital for nanoelectronics design and fabrication during
scale-down to the ultimate 4--6 nm transistor gate lengths over
the next 15 years. We review the history and state-of-the-art of
measurements, simulations, and analyses of ion, fast neutral, and
ballistic electron EAD's. Ion measurements have been made using
electrostatic energy analyzers, cylindrical mirror analyzers, and
retarding grid analyzers, often now coupled with quadrupole mass
spectrometers to compare different ions in the same discharge.
The state-of-the-art for capacitive rf sheaths has advanced
greatly since the first observation of a bi-modal ion energy
distribution (IED) over 50 years ago. More recently, measurement
techniques and models have been developed to determine fast
neutral distributions. Monte Carlo, and particle-in-cell
simulations with Monte Carlo collisions (PIC-MCC) have been used
to study IED's since the late 1980's.
Recently, PIC-MCC simulations were used to obtain ballistic
electron EAD's. Analytical models of the IED
for collisionless rf sheaths have emphasized the role of
$\tau_i/\tau_{rf}$, the ratio of ion transit time across the
sheath to rf period, with separate models for the low and high
frequency regimes. Various simplifications and bridging models
now exist. For collisional rf sheaths, the important role of
$\lambda_i/s$, the ratio of ion-neutral mean free path to sheath
width, in modifying the collisionless bi-modal IED was
demonstrated in the early 1990's. Surface charging effects on
insulating substrates are important for low frequency rf
discharges or for pulsed transient sheaths; the latter are found
during plasma ion implantation processes. Analytical models of
the IED for plasma ion implantation have been extended to
insulating surfaces and compared with experimental results.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2009.GEC.GT1.1