Bulletin of the American Physical Society
2006 59th Annual Gaseous Electronics Conference
Tuesday–Friday, October 10–13, 2006; Columbus, Ohio
Session VF1: Plasma-Surface Interactions
8:00 AM–9:30 AM,
Friday, October 13, 2006
Holiday Inn
Room: Salon CD
Chair: Svetlana Radovanov, Varian Semiconductor Equipment
Abstract ID: BAPS.2006.GEC.VF1.3
Abstract: VF1.00003 : In-situ measurement of an accumulation and a reduction of bottom charging on a SiO$_{2}$ contact hole with a high aspect ratio in a pulsed 2f-CCP in Ar and in CF$_{4}$/Ar
8:45 AM–9:00 AM
Preview Abstract Abstract
Authors:
Takeshi Ohmori
Takeshi K. Goto
(Keio Univ.)
Takeshi Kitajima
(NDA)
Toshiaki Makabe
(Keio Univ.)
Seiji Samukawa
(Tohoku Univ.)
Ikuo Kurachi
(MIYAGI-OKI)
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2006.GEC.VF1.3
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