Bulletin of the American Physical Society
2006 59th Annual Gaseous Electronics Conference
Tuesday–Friday, October 10–13, 2006; Columbus, Ohio
Session FPT1: Poster IA
7:15 PM,
Tuesday, October 10, 2006
Holiday Inn
Room: Salon A, 7:15pm - 9:15pm
Abstract ID: BAPS.2006.GEC.FPT1.2
Abstract: FPT1.00002 : Passivation of the SiC gate-oxide interface using remote microwave plasmas*
Preview Abstract Abstract
Authors:
S.F. Adams
J.D. Scofield
C.A. DeJoseph, Jr.
(Air Force Research Laboratory, Wright-Patterson AFB, OH)
J.M. Williamson
(Innovative Scientific Solutions, Inc., Dayton, OH)
J.D. Umbel
(UES, Inc., Dayton, OH)
*This work supported by the Air Force Office of Scientific Research.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2006.GEC.FPT1.2
Follow Us |
Engage
Become an APS Member |
My APS
Renew Membership |
Information for |
About APSThe American Physical Society (APS) is a non-profit membership organization working to advance the knowledge of physics. |
© 2024 American Physical Society
| All rights reserved | Terms of Use
| Contact Us
Headquarters
1 Physics Ellipse, College Park, MD 20740-3844
(301) 209-3200
Editorial Office
100 Motor Pkwy, Suite 110, Hauppauge, NY 11788
(631) 591-4000
Office of Public Affairs
529 14th St NW, Suite 1050, Washington, D.C. 20045-2001
(202) 662-8700