Bulletin of the American Physical Society
2005 58th Gaseous Electronics Conference
Sunday–Thursday, October 16–20, 2005; San Jose, California
Session MT1: Material Processing |
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Chair: Helen Hwang, NASA, Ames, CA Room: Doubletree Hotel Pine |
Tuesday, October 18, 2005 4:00PM - 4:15PM |
MT1.00001: Diagnostics of a Supersonic Plasma Jet Reactor with Secondary Discharge Jami McLaren, Lenka Zajickova, Joachim Heberlein We have used electrostatic probe measurements to determine values of floating potential, electron temperature, and ion density near the substrate in a supersonic plasma jet deposition system. This system involves a plasma jet expanding to supersonic speeds into a chamber at a pressure of 3 torr. To enhance the deposition, a secondary discharge is superimposed over the plasma jet by applying a bias to the substrate with respect to the grounded torch nozzle anode. Probe measurements have been executed for varying substrate bias, torch power, and plasma composition to determine how these deposition conditions affect the measured plasma parameters, which are assumed important for superhard B-C-N film deposition. The diagnostics reveal that ion density is enhanced by increasing torch power and positive substrate bias, the electron temperature is decreased by introducing hydrogen to the plasma jet, and the plasma floating potential increases linearly with positive substrate bias while remaining approximately constant with negative bias. The implications of these measurements for superhard film deposition in our system will be discussed. [Preview Abstract] |
Tuesday, October 18, 2005 4:15PM - 4:30PM |
MT1.00002: High Frequency ICP Source for HDPCVD Jeunghoon Han, Daebong Kang, Jinhyuk Yoo We have developed the high frequency source with a parallel antenna for HDP CVD. In the high frequency source, we have obtained the following results. The low capacitive voltage applied to antenna could minimize capacitive damage and reduce particles from ceramic dome covering chamber. The high frequency source made lower electron temperature than low frequency (400 KHz or 2 MHz), which can minimize plasma damage on the wafer. The plasma density from this source is from 10E11 to 10E12 per cubic volume and the electron temperature is less than 4 eV in 13.56 MHz. And the antenna of the low impedance reached easy impedance matching in 13.56 MHz. This source can be easy plasma strike and stable operation at low pressure (under 1mTorr) because of using High Frequency Source. It has been proven that it was improved gap fill at lower pressure. This result is due to longer mean free paths at lower pressures. Lower pressure than 1mTorr can be made a high-conductance chamber. Also, it is important to have the symmetrical pumping system for improved gap fill performance within wafer. The process characteristic of HDP CVD has proven in 0.065 $\mu$m technology with AR (aspect ratio) 6:1 and will has expected that the gap fill solution of the next generation device. [Preview Abstract] |
Tuesday, October 18, 2005 4:30PM - 4:45PM |
MT1.00003: Investigation of charge-up and ion reflection effects in SiO$_2$ etching using a three-dimensional charge-up simulation Sung Jin Kim, Hae June Lee, Jae Koo Lee A charge-up damage is one of plasma process induced damages and comes from different motions of ions and electrons. We have performed a three-dimensional charge-up simulation [1] to examine charge-up effects. Kinetic results of particles obtained from 1D particle-in-cell simulations [2] are used as input parameters of the 3D charge-up simulation. Charge-up potential and etching rates are calculated according to ion energy distributions, aspect ratios of trenches, and secondary electron emission coefficients. In ion physical etching with etching rate less than 1 $\mu $m/min, since a charge-up potential saturated time is shorter than a one-atomic layer etched time, charge-up potential plays an important role in etching profile evolution. Ion reflection coefficients calculated by trim code and inequality of ion and electron fluxes on wafers are considered to investigate ion reflection, which creates undesirable etching profiles. *This work is supported by Tera-level nanodevices in Korea Ministry of Science and Technology. \newline [1] H.S. Park, S.J. Kim, J.K. Lee, IEEE Trans. Plasma Science, 31 (2003) 703 \newline [2] H.C. Kim, J.K. Lee, Phys. Rev. Lett., 93 (2004) 085003 [Preview Abstract] |
Tuesday, October 18, 2005 4:45PM - 5:00PM |
MT1.00004: Effect of Species Density and Ion Scattering During Ashing on Ultra Low-$\kappa $ Inter-Level Dielectric Films M.A. Worsley, S. Bent, N.C.M. Fuller, T.L. Tai, J. Doyle, M. Rothwell, T.J. Dalton Results of experimental analysis of an ultra low-$\kappa $ inter-level dielectric (ILD) after ashing together with a determination of key parameters in the plasma are presented. Optical emission (OE) actinometry is used to measure the absolute densities of reactive radical species in several plasmas, and modeling of sheath thickness and positive ion mean free path is used to estimate the significance of ion scattering. The densities of H, N, and O are determined as a function of pressure and percentage argon in Ar/H$_{2}$, Ar/N$_{2}$, and Ar/O$_{2}$ plasmas respectively. Modeling reveals that a bias power range of 0-350W allows the sampling of different scattering regimes. Patterned structures in a porous organosilicate glass (OSG) are ashed under the characterized plasma conditions and then analyzed using XPS. Data from the OE actinometry and modeling are combined with the XPS data to gain further insight into the mechanism by which modification of the OSG occurs in a patterned structure. [Preview Abstract] |
Tuesday, October 18, 2005 5:00PM - 5:15PM |
MT1.00005: Etching with Electron Beam-Generated Ion-Ion Plasmas S.G. Walton, D. Leonhardt, M. Lampe, R.F. Fernsler The advantage of positive ion-negative ion (ion-ion) plasmas in etching processes is the delivery of anisotropic fluxes of \textit{both} positive and negative ions to the substrate surface, which is thought to prevent device damage and isotropic etch profiles associated with surface charging. Unfortunately, the low electron temperature required for ion-ion plasma formation in halogen-based gases is typically found only in the afterglow of pulsed plasmas, thereby limiting the duration and magnitude of the useful flux. Electron beam--generated plasmas are characterized by low electron temperatures ($<$1.0 eV) during all phases of plasma production and can thus provide a continuous ion-ion plasma. In this work, we discuss silicon etching using these ion-ion plasmas produced in Ar/SF$_{6}$ mixtures. System operation and diagnostics are presented and correlated to a theoretical model (See paper by M. Lampe et al.). Silicon etch rates as a function of various input parameters will also be discussed. This work was supported by the Office of Naval Research. [Preview Abstract] |
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