2005 58th Gaseous Electronics Conference
Sunday–Thursday, October 16–20, 2005;
San Jose, California
Session HT: GEC Foundation Talk
10:00 AM–11:00 AM,
Tuesday, October 18, 2005
Doubletree Hotel
Room: Pine/Cedar
Chair: Mark Kushner, Iowa State University
Abstract ID: BAPS.2005.GEC.HT.1
Abstract: HT.00001 : ``Plasma'' and ``Sheaths'' --- The Discharge Science of Irving Langmuir
10:00 AM–11:00 AM
Preview Abstract
Author:
M.A. Lieberman
(University of California, Berkeley)
``We shall use the name {\it plasma} to describe this region
containing balanced charges of ions and electrons'' [1]. With
these words, Irving Langmuir named our field. The following
year
he explicitly introduced the separation of a discharge into bulk
plasma and sheath regions: ``The word `plasma' will be used to
designate that portion of an arc-type discharge in which the
densities of ions and electrons are high but substantially
equal.
It embraces the whole space not occupied by `sheaths' '' [2].
His remarkable contributions include [3]: Child-Langmuir
sheaths,
Langmuir probes, Langmuir waves, Langmuir's paradox, Langmuir's
condition for double layers, Langmuir's isotherm for
adsorption-desorption kinetics, and Langmuir-Hinshelwood surface
reactions. Langmuir's famous talk, ``Pathological Science,''
touched our field shortly after the ``discovery'' of cold fusion
in 1989 [4].\\
Langmuir's plasma-sheath separation, along with particle,
momentum and energy balance, has been very useful. The
quasineutral plasma is described using simple diffusion models
or
more elaborate kinetic models, depending on the type of gas and
pressure regime. The space-charge sheaths are modeled as low or
high voltage, collisionless or collisional, dc or rf-driven, as
appropriate. Exact conditions for joining plasma and sheath are
well-known, but simple methods often suffice in practice. The
analysis determines, in a transparent way, important discharge
properties, such as ion and neutral radical fluxes to electrodes
and ion acceleration energy across electrode sheaths. In a
similar manner, for his adsorption-desorption isotherm, Langmuir
made ``assumptions which are as simple as possible $\dots$ to
see
whether the resulting equations can find a field of
application''
[5]. When extended to incorporate ion-induced desorption, one
obtains a simple model for ion-assisted etching in terms of the
fluxes and ion energies.\\
These types of simple assumptions did not please some people.
``Langmuir is the most convincing lecturer that I have ever
heard
$\dots$ I have heard Langmuir lecture when I knew he was wrong,
but I had to repeat to myself: `He is wrong; I know he is wrong.
He is wrong,' or I should have believed like the others'' [6].
Hopefully, you will believe.\\
References: [1] I. Langmuir, {\it Proc. Nat. Acad. Sci.} {\bf
14}
627 (1928).
[2] I. Langmuir and L. Tonks, {\it Phys. Rev.} {\bf 33} 195
(1929).
[3] {\it The Collected Works of Irving Langmuir,} 12 volumes, C.
Guy Suits, ed., Pergamon Press, New York, 1960--62.
[4] Available from
www.cs.princeton.edu/~ken/Langmuir/langmuir.htm; see also I.
Langmuir and R.N. Hall, {\it Physics Today} {\bf 42} 36 (1989).
[5] I. Langmuir, Nobel Lecture, December 14, 1932.
[6] W.D. Bancroft, {\it J. Phys. Chem.} {\bf 35} 1904 (1931).
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2005.GEC.HT.1