Stacked 2D Materials For Temporal Gating of Ion Transport Through Nanopores with both DC and AC Gate Voltage*

Transport properties of nanopores can be controlled by chemical modification, electrolyte conditions, or placing a gate near or in the pore, but with most systems changes are slow and allow a electrical double-layer (EDL) to form. Here, we present a nanopore system with 2D gates whose electrical potential is gated with DC or AC voltages. We drilled single sub-10nm nanopores by TEM in stacked 2D materials (hBN and graphene) over a 3um diameter micropore in a silicon nitride membrane. We tested hBN-graphene-hBN stacks, a ~3nm conducting layer of graphene between two insulating hBN flakes. We were then able to measure ionic current through the pores with varying KCl concentration using a PDMS conductivity cell. We also developed a thin printed circuit board (PCB) to apply high frequency voltages to the chip, and added metal electrodes to the chip with contacts to the graphene layer of an hBN-graphene-hBN stack. We then apply both DC and AC voltages to the electrodes, allowing us to test non-equilibrium EDL gating.