Synthesis and Characterization of BiTeI Single Crystals Using the Bridgman Growth Method*

Bismuth Tellurium Iodide (BiTeI) is a noncentrosymmetric layered semiconductor with quantum properties arising from strong spin-orbit coupling and asymmetric crystal structure [Ishizaka et al., 2011][Zhu & Alexandradinata, 2024]. Here, we detail the growth and characterization of large single crystals of BiTeI and intercalated variants that were produced using a home built Bridgman crystal growth apparatus. This approach relies on a dynamic furnace interaction, where a quartz ampoule that contains pre-reacted polycrystalline BiTeI  is physically pulled through a temperature gradient over a long time period. To encourage nucleation of single crystals, we use a quartz tube that is shaped to a sharp point at the bottom which selectively nucleates single grains. Pulling times spanning from two days to two weeks were investigated. Powder X-ray diffraction measurements were used to confirm the crystalline phase, while electrical resistivity and Hall effect measurements reveal the expected electrical transport behavior and quantify the charge carrier density. These measurements set the stage for future efforts to intercalate BiTeI with elements such as Mn, with the goal of inducing quantum phenomena such as magnetism.