Photo-MuSR and semiconductors, developing the technique

This contribution focuses on developments in working semiconductors and muons combined with the relatively new laser on the High-Field muon spectrometer (HIFI) at the Science and Technology Facilities Council' Neutron and Muon Source located at Rutherford Appleton Laboratory (Didcot, UK). Some illumination-based techniques utilizing flashlamps or lasers have been done in the past relating to semiconductors. The primary purpose of the illumination has been to vary the carrier concentration in order to see how the Mu signal responds and further develop an understanding of the (1) stability and dynamics of the Mu (H) states and (2) gain insight into carrier behavior. The new laser system on HIFI opens up a range of potential measurements along these same lines but with a different variety of controls. To date, we have worked on measurements such as attempting vibrational spectroscopy (Mu stimulated by the laser); direct ionization of Mu donor/acceptor states; charge-cycles and site change dynamics; carrier mobility and recombination times.

This contribution provides a rough overview to H defects in semiconductors and brief discussion of a few recent examples where we have been working on both developing the technique and fundamental measurements that are important for the semiconductor field.