Bulletin of the American Physical Society
2005 36th Meeting of the Division of Atomic, Molecular and Optical Physics
Tuesday–Saturday, May 17–21, 2005; Lincoln, Nebraska
Session G2: Electron Driven Processes and Their Applications |
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Sponsoring Units: GEC Chair: Thomas N. Rescigno, Lawrence Berkeley National Laboratory Room: Burnham Yates Conference Center Ballroom II |
Thursday, May 19, 2005 1:30PM - 2:06PM |
G2.00001: Fundamental Data for Semiconductor Manufacturing Unit Process Modeling and Simulation: Generation, Application and Current Needs Invited Speaker: The aim of semiconductor device modeling and simulation of unit process integration is to predict the impact of process integrations on how material properties and topographies evolve as devices are being manufactured. The complexity of most semiconductor manufacturing processes, notably plasma processes, means that simulations of these processes relies heavily on the availability of comprehensive plasma, atomic and molecular physics, and surface physics data. More often than not, this data has not existed, has been difficult to measure experimentally or has been expensive to compute. The pace of process development ($\sim$18 months per technology generation) has made filling data gaps challenging. A program for the generation of electron impact cross-sections, heavy particle collision process rates and surface interaction properties has been developed at Freescale Semiconductor Inc. to fill the needs of a comprehensive unit process integration simulation effort. The life-cycle of data generation through application will be described in this presentation highlighting areas of general need for future technology nodes. [Preview Abstract] |
Thursday, May 19, 2005 2:06PM - 2:42PM |
G2.00002: New Opportunities in Plasma Production of Radicals and Ions for Treatment of Surfaces Invited Speaker: The plasma production of radicals and ions for treatment of surfaces spans a large range in value of the material. In microelectronics, plasma production of radicals and ions modifies materials having values of \$100s - \$1000s/cm$^{2}$. At the other extreme, plasmas are used to modify polymers having values of \$0.05/m$^{2}$. In recognition of these differences in market value, the technologies used for modification of surfaces are also different. Microelectronics fabrication is performed almost exclusively by low pressure plasmas using complex tailored gas mixtures (e.g., Ar/C$_{4}$F$_ {8}$/O$_{2}$/N$_{2}$/CO for etching of dielectrics). Polymer modification is typically performed using atmospheric pressure plasmas sustained in (humid) air. As new applications of plasma modification (or fabrication) of surfaces are considered, such as for biocompatibility, there are also new opportunities for developing or adapting technologies that optimally produce the desired radicals and ion fluxes required for surface modification. These decisions are best made with knowledge of the manner in which the plasma generated species interact with the surface. For example, the hydrophilic nature of polymer surfaces depends not only on the increase in surface energy imparted by reaction with plasma generated species but also on the change in morphology which also occurs. In this talk, the development of new plasma technologies for surface treatment will be discussed from the perspective of opportunities for contributions from the AMO community in both gas phase generation of reactive species and their interaction with surfaces. [Preview Abstract] |
Thursday, May 19, 2005 2:42PM - 3:18PM |
G2.00003: The Polyatomic Dynamics of Electron-Driven Chemistry Invited Speaker: Electron collisions with atoms and molecules initiate almost all the relevant chemistry associated with the plasma processing of materials, radiation chemistry and modern lighting technology. In the life sciences, the dissociative attachment of low energy electrons has been implicated in the initiation of strand breaking in DNA. The treatment of the polyatomic dynamics of electron-driven chemistry from first principles has finally been made possible by a combination of advances in theoretical techniques for electron-molecule scattering with modern wave packet methods for describing the nuclear dynamics of polyatomic molecules. This talk will discuss the ways in which the multidimensional nuclear dynamics in polyatomic systems during resonant electron collisions result in the channeling of electronic energy into vibrational excitation and dissociation, and how those dynamics can produce effects that cannot be described by one-dimensional models. The state of the art will be illustrated by calculations on dissociative attachment of electrons to water in full dimensionality, $e^-+H_2 O\to \left\{ {{\begin{array}{*{20}c} {H^-+OH} \hfill \\ {O^-+H_2 } \hfill \\ \end{array} }} \right.$. This example also illustrates how the dynamics on the potential surfaces associated with multiple resonances can be affected by conical intersections between them that may determine which dissociation products will be produced. [Preview Abstract] |
Thursday, May 19, 2005 3:18PM - 3:54PM |
G2.00004: Elucidating the underlying role of electron-driven processes in atmospheric phenomena Invited Speaker: Electron-impact excitation plays an important role in emission from aurora and a less significant but nonetheless crucial role in the dayglow and nightglow. For some molecules, such as N$_{\rm 2}$, O$_{\rm 2}$ and NO, electron-impact excitation can be followed by radiative cascade through many different sets of energy levels, producing emission with a rich number of lines. We review the application of our enhanced statistical equilibrium program to predict this rich spectrum of radiation, and we compare results we have obtained against available independent measurements. Specific examples, including fundamental IR emission in NO, the 0.76$\mu$m O$_{\rm 2}$ line and VUV emission in N$_{\rm 2}$, will be chosen to highlight the underlying role of electron processes in their origin. \newline \newline Collaborators: L. Campbell and P.J.O. Teubner. [Preview Abstract] |
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