Bulletin of the American Physical Society
2018 Annual Meeting of the APS Four Corners Section
Volume 63, Number 16
Friday–Saturday, October 12–13, 2018; University of Utah, Salt Lake City, Utah
Session G01: Poster Session
5:00 PM,
Friday, October 12, 2018
CSC
Room: 205/206
Chair: David Kieda, University of Utah
Abstract ID: BAPS.2018.4CS.G01.39
Abstract: G01.00039 : Strain engineering of flat bands in trilayer graphene
Presenter:
Jameson Berg
(University of Utah)
Authors:
Jameson Berg
(University of Utah)
Chuankun Liu
(University of Utah)
Ryuichi Tsuchikawa
(University of Utah)
Vikram Deshpande
(University of Utah)
This is the preliminary work into our study of strain effects on the flat bands present in aligned ABC stacked trilayer graphene (TLG)/Hexagonal boron nitride (hBN) heterostructures. The flat bands are a result of the Moiré patterns created between the TLG and hBN due to the small lattice constant mismatch and nearly 0 twist angle between the layers. Recent work has shown that these heterostructure have gate-tunable Mott insulating states at partial filling. We aim to expand on these results by applying stain to a ABC TLG/hBN heterostructure using a flexible substrate in place of the standard silicon substrate. The application of strain will modify the interlayer coupling between the TLG and hBN leading to a new platform to studying flat band physics.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2018.4CS.G01.39
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